Hydrogen-Blocking Film for Ferroelectric Capacitors

Abstract

An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH 4 ) and nitrogen (N 2 ) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.

1 . A method of fabricating an integrated circuit including a ferroelectric capacitor, comprising the steps of:
 forming a capacitor structure comprised of a ferroelectric material disposed between two conductive plates, near a semiconducting surface of a body;   placing the body into a chamber of a plasma reactor;   operating the plasma reactor to deposit a first silicon nitride film over the capacitor structure, comprising:
 heating the chamber to a temperature of at least 350° C.; 
 flowing a combination of gases comprising a silicon-bearing gas, and nitrogen gas as the sole nitrogen-bearing gas into the chamber; and 
 applying radio frequency energy to electrodes in the plasma reactor to generate a plasma; and 
   removing the body from the chamber.   
     
     
         2 . The method of  claim 1 , wherein the combination of gases further comprises argon gas. 
     
     
         3 . The method of  claim 1 , wherein the step of applying radio frequency energy comprises:
 applying low frequency energy at a support electrode of the plasma reactor at which the body is placed, and high frequency energy at another electrode of the plasma reactor;   wherein the ratio of high frequency energy to low frequency energy is not greater than about 2.0.   
     
     
         4 . The method of  claim 3 , wherein the ratio of high frequency energy to low frequency energy is zero. 
     
     
         5 . The method of  claim 1 , further comprising:
 after the operating step, flowing a combination of gases comprising a silicon-bearing gas and ammonia gas into a chamber of a plasma reactor in which the body has been placed, while applying radio frequency energy to electrodes in the plasma reactor to generate a plasma, to deposit a second silicon nitride film over the first silicon nitride film.   
     
     
         6 . The method of  claim 5 , further comprising:
 prior to the step of operating the plasma reactor to deposit a first silicon nitride film, forming a film comprising aluminum oxide over the capacitor structure.   
     
     
         7 . The method of  claim 1 , further comprising:
 prior to the step of operating the plasma reactor to deposit a first silicon nitride film, forming a film comprising aluminum oxide over the capacitor structure.   
     
     
         8 . The method of  claim 1 , wherein the first silicon nitride film has a ratio of Si—H bonds to N—H bonds substantially less than 1.0. 
     
     
         9 . The method of  claim 1 , wherein the ferroelectric material comprises lead zirconium titanate. 
     
     
         10 . An integrated circuit structure, comprising:
 a ferroelectric capacitor structure comprising first and second conductive plates disposed near a semiconducting surface of a body, and a ferroelectric material disposed between the first and second conductive plates;   a first silicon nitride film over the capacitor structure, formed by the method comprising the steps of:
 placing the body into a chamber of a plasma reactor; 
 operating the plasma reactor to deposit a first silicon nitride film over the capacitor structure, comprising:
 heating the chamber to a temperature of at least 350° C.; 
 flowing a combination of gases comprising a silicon-bearing gas, and nitrogen gas as the sole nitrogen-bearing gas into the chamber; and 
 applying radio frequency energy to electrodes in the plasma reactor to generate a plasma; and 
 
 removing the body from the chamber. 
   
     
     
         11 . The structure of  claim 10 , wherein the combination of gases further comprises argon gas. 
     
     
         12 . The structure of  claim 10 , wherein the step of applying radio frequency energy comprises:
 applying low frequency energy at a support electrode of the plasma reactor at which the body is placed, plasma reactor and high frequency energy at another electrode of the plasma reactor;   wherein the ratio of high frequency energy to low frequency energy is not greater than about 2.0.   
     
     
         13 . The structure of  claim 12 , wherein the ratio of high frequency energy to low frequency energy is zero. 
     
     
         14 . The structure of  claim 10 , further comprising:
 a second silicon nitride film disposed over the first silicon nitride film.   
     
     
         15 . The structure of  claim 10 , further comprising:
 a film comprised of aluminum oxide disposed over the ferroelectric capacitor structure and disposed under the first silicon nitride film.   
     
     
         16 . The structure of  claim 10 , wherein the first silicon nitride film has a ratio of Si—H bonds to N—H bonds substantially less than 1.0. 
     
     
         17 . The structure of  claim 10 , wherein the ferroelectric material comprises lead zirconium titanate. 
     
     
         18 . The structure of  claim 10 , further comprising:
 a metal-oxide-semiconductor transistor disposed near the semiconducting surface and having a portion underlying a portion of the ferroelectric capacitor structure;   a first interlevel dielectric disposed over the transistor and underlying the ferroelectric capacitor structure; and   a conductive plug disposed within the first interlevel dielectric, and in contact with the first conductive plate of the ferroelectric capacitor and a source/drain region of the transistor.