Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus

Abstract

A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates.

1 . A substrate processing apparatus, comprising:
 a processing chamber that forms a thin film on a main surface of a plurality of substrates;   a heater provided outside of the processing chamber, for heating an inside of the processing chamber;   a first gas supply part configured to supply a first processing gas containing at least one element of a plurality of elements constituting the thin film formed on the main surface of the substrate and capable of depositing a film by itself to a gas flow outside of a region where the plurality of substrates loaded into the processing chamber are arranged, which is a region not opposed to the heater in the processing chamber;   a second gas supply part provided independently of the first gas supply part, configured to supply the first processing gas to a middle part of a gas flow in a region where the plurality of substrates loaded into the processing chamber are arranged, which is a region opposed to the heater in the processing chamber;   a third gas supply part configured to supply a second processing gas containing at least other one element of the plurality of elements and not capable of depositing the film by itself, to an upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, which is the region not opposed to the heater in the processing chamber;   an exhaust part provided on a lower stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, which is the region not opposed to the heater in the processing chamber; and   a controller that controls so as to cause the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates.   
     
     
         2 . The substrate processing apparatus according to  claim 1 , wherein the second gas supply part has a plurality of first gas supply nozzles with mutually different lengths, and the first gas supply nozzles are respectively extended from an upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, up to a plurality of middle parts of mutually different positions, provided along the gas flow in a region where the plurality of substrate loaded into the processing chamber are arranged. 
     
     
         3 . The substrate processing apparatus according to  claim 1 , further having a fourth gas supply part configured to supply the second processing gas to the middle part of the gas flow in a region where the plurality of substrates loaded into the processing chamber are arranged, which is the region opposed to the heater in the processing chamber. 
     
     
         4 . The substrate processing apparatus according to  claim 2 , further including the fourth gas supply part configured to supply the second processing gas to the middle part of the gas flow in a region where the plurality of substrates loaded into the processing chamber are arranged, which is the region opposed to the heater in the processing chamber, wherein the fourth gas supply part has a plurality of gas supply nozzles with mutually different lengths, and the second gas supply nozzles are respectively extended to a plurality of middle parts provided along the gas flow at mutually different positions in a region where the plurality of substrates are loaded into the processing chamber, from an upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged. 
     
     
         5 . The substrate processing apparatus according to  claim 1 , further having a temperature controller that controls the heater, so that a main surface temperature of the plurality of substrates loaded into the processing chamber is increased up to a temperature at which at least both of the first processing gas and the second processing gas are thermally decomposed, and the main surface temperature between the plurality of substrates is maintained to be substantially equal to each other over an overall region where the plurality of substrates are arranged. 
     
     
         6 . The substrate processing apparatus according to  claim 4 , wherein the first gas supply nozzle and the second gas supply nozzle are arranged, so that the nozzles of substantially same lengths are adjacent to each other. 
     
     
         7 . A substrate processing apparatus, comprising:
 a processing chamber that forms a thin film on a main surface of a plurality of substrates;   a gas supply part configured to supply a first processing gas containing at least one element of a plurality of elements constituting the thin film formed on the main surface of the substrate and capable of depositing a film by itself, to an upper stream side of a gas flow outside of a region where the plurality of substrates loaded into the processing chamber are arranged, also to supply the first processing gas to a middle part of the gas flow within the region where the plurality of substrates loaded into the processing chamber are arranged, by a multi-system nozzle;   another gas supply part configured to supply a second processing gas containing at least other one element of the plurality of elements and not capable of depositing the film by itself, to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, by a nozzle provided on the upper stream side of the gas flow, which is a different nozzle from the multi-system nozzle; and   a controller that controls so as to cause the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates.   
     
     
         8 . The substrate processing apparatus according to  claim 7 , wherein the gas supply part supplies the first processing gas to a plurality of middle parts provided along the gas flow at mutually different positions, in a region where the plurality of substrates loaded into the processing chamber are arranged. 
     
     
         9 . The substrate processing apparatus according to  claim 7 , wherein the other gas supply part further supplies the second processing gas to the middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged. 
     
     
         10 . The substrate processing apparatus according to  claim 7 , wherein the first processing gas is a gas containing a silicon element, and the second processing gas is a gas containing a nitrogen element or an oxygen element, and the thin film is a thin film formed of an amorphous material containing the silicon element and the nitrogen element or the thin film formed of the amorphous material containing the silicon element and the oxygen element. 
     
     
         11 . The substrate processing apparatus according to  claim 7 , wherein the first processing gas is a gas containing a chlorine element, and the second processing gas is a gas containing a nitrogen element or an oxygen element. 
     
     
         12 . The substrate processing apparatus according to  claim 7 , wherein the first processing gas is a gas of anyone of TCS, HCD, and BTBAS, and the second processing gas is an NH3 gas. 
     
     
         13 . The substrate processing apparatus according to  claim 7 , wherein the multi-system nozzle of the gas supply part is a plurality of nozzles with mutually different lengths. 
     
     
         14 . The substrate processing apparatus according to  claim 9 , wherein the other gas supply part supplies the second processing gas by a plurality of nozzles with mutually different lengths.