US2013087539A1PendingUtilityA1
Method and Device for Forming Solder Deposits
Est. expiryApr 16, 2030(~3.8 yrs left)· nominal 20-yr term from priority
Inventors:Ghassem Azdasht
H10P 72/74H10W 72/07131H10W 72/01215H10W 72/01204H10W 72/251H10W 72/90H10W 72/29H10W 72/20H10W 72/0112B23K 1/0056B23K 3/0607B23K 3/06B23K 1/20
47
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Claims
Abstract
The invention relates to a method for forming solder deposits ( 34 ) on elevated contact metallizations ( 24 ) of terminal faces ( 23 ) of a substrate ( 19 ) formed in particular as a semiconductor component, in which wetting surfaces ( 26 ) of the contact metallizations are brought into physical contact with a solder material layer ( 15 ) arranged on a solder material carrier ( 13 ), at least for the duration of the physical contact a heating of the substrate and a tempering of the solder material layer takes place, and subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.
Claims
exact text as granted — not AI-modified1 . Method for forming solder deposits on elevated contact metallizations of a substrate formed in particular as a semiconductor component, in which wetting surfaces of the contact metallizations are brought into physical contact with a solder material layer arranged on a solder material carrier,
at least for the duration of the physical contact a heating of the substrate and a tempering of the solder material layer takes place, and subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.
2 . Method according to claim 1 ,
characterized in that during the formation of the physical contact with the solder material layer at least the contact metallizations are disposed in a protective medium atmosphere.
3 . Method according to claim 2 ,
characterized in that the formation of the protective medium atmosphere is effected by the application of a flux layer onto the solder material layer.
4 . Method according to claim 1 ,
characterized in that the contacting of the contact metallizations with the solder material layer and the separation of the contact metallizations from the solder material layer is effected by an approach or retreat motion of the substrate.
5 . Method according to claim 1 ,
characterized in that for performing the approach or retreat motion the substrate is accommodated in a handling device which also serves the purpose of applying laser energy to the substrate.
6 . Method according to claim 1 ,
characterized in that the tempering of the solder material layer is performed by means of a temperable carrier platform accommodating the solder material carrier.
7 . Method according to claim 1 ,
characterized in that for forming the solder material layer the solder material carrier is provided with a layer of solder material molded bodies.
8 . Method according to claim 7 ,
characterized in that the solder material molded bodies have a diameter which is smaller than the distance between the contact metallizations of the substrate.
9 . Device for forming solder deposits on elevated contact metallizations of a substrate particularly formed as a semiconductor component with an accommodating device for accommodating the substrate, a heating device for heating the substrate and a carrier platform for providing a solder material layer disposed on a solder material carrier, wherein the carrier platform is equipped with a tempering device for tempering the solder material layer and with a feeding device which serves the purpose of performing an approach and a retreat motion, such that the formation of a physical contact between the contact metallizations of the substrate and the solder material layer with a subsequent separation of the physical contact is made possible.
10 . Device according to claim 9 ,
characterized in that the accommodating device for accommodating the substrate is formed by a handling device which is equipped with a laser device for applying laser energy to the substrate.
11 . Device according to claim 9 ,
characterized in that the carrier platform is equipped with a feeding device for performing the approach and the retreat motion.
12 . Device according to claim 11 ,
characterized in that the carrier platform is formed as a tempering device.
13 . Device according to claim 9 ,
characterized in that the tempering device is formed independent of the carrier platform.Cited by (0)
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