Methods and Systems for Forming Thin Films

Abstract

A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

What is claimed is: 
     
         1 . A system for forming a thin film, the system comprising:
 a processing chamber, wherein the processing chamber comprises a plurality of reaction spaces;   a susceptor for supporting one or more substrates; and   a control system;   wherein the plurality of reaction spaces are fluidically separated from one another;   wherein a first reaction space is operable to provide a Group III precursor;   wherein a second reaction space is operable to provide a Group V precursor;   wherein a third reaction space includes a film diagnostic tool.   
     
     
         2 . The system of  claim 1 , wherein the susceptor can be rotated to move the substrate between the plurality of reaction spaces. 
     
     
         3 . The system of  claim 1 , wherein the substrate can be heated to 700 C. 
     
     
         4 . The system of  claim 1 , wherein the film diagnostic tool comprises at least one of reflection-absorption infrared spectroscopy (RAIRS), low-energy electron diffraction (LEED) spectroscopy, x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), scanning probe microscopy (STM, AFM), near edge x-ray absorption fine structure (NEXAFS), spectral reflectance and transmission, single wavelength reflectance and transmission, optical pyrometry (single wavelength, dual wavelength, or using spectral radiometry), emmisometry, ellipsometry, surface light scattering, or optical polarimetry. 
     
     
         5 . The system of  claim 1 , wherein the Group III precursor is at least one of a chemical compound that includes one or more Group III metal atoms, such as one or more of Ga, In or Al. 
     
     
         6 . The system of  claim 1 , wherein the Group V precursor is at least one of a chemical compound that includes one or more Group V metal atoms, such as one or more of N, As or P. 
     
     
         7 . The system of  claim 1 , further comprising wherein a fourth reaction space operable to provide a hydrogen-containing species. 
     
     
         8 . The system of  claim 7 , wherein the hydrogen-containing species is excited with a plasma. 
     
     
         9 . The system of  claim 1 , wherein the plurality of reaction spaces numbers one of 2, 3, 4, 5, or 6. 
     
     
         10 . The system of  claim 1 , wherein the providing the Group III precursor forms a layer with a thickness less than one monolayer on a surface of the substrate. 
     
     
         11 . The system of  claim 1 , wherein the providing the Group V precursor forms a layer with a thickness less than one monolayer on a surface of the substrate. 
     
     
         12 . The system of  claim 1 , wherein the Group III precursor comprises Ga. 
     
     
         13 . The system of  claim 1 , wherein the Group V precursor comprises a nitrogen-containing species. 
     
     
         14 . The system of  claim 13 , wherein the nitrogen-containing species is excited with a plasma 
     
     
         15 . The system of  claim 1 , wherein the Group III precursor comprises Ga, the Group V precursor comprises a plasma excited nitrogen-containing species, and the thin film comprises GaN.