Tellurium (Te) Precursors for Making Phase Change Memory Materials

Abstract

Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process.

1 . A process of depositing Te containing chalcogenide phase change material on a substrate, comprising steps of: 
       depositing a Te precursor comprising an organotellurol having a general structure of:
 R—Te—R′
 wherein R is selected from the group consisting of an alkyl group or an alkenyl group having 1 to 10 carbons in linear, branched, or cyclic form; 
 an aromatic group having C 6 -C 12 ; a dialkylamino group; an organosilyl group; and an organogermyl; and R′ is selected from the group consisting of hydrogen and deuterium; 
 
 
       depositing a Ge precursor comprising aminogermanes having a general structure of:
 (R 1 R 2 N) 4 Ge
 wherein R 1  and R 2  are alkyl groups having 1 to 10 carbons in linear, branched, or cyclic form; and 
 
 
       depositing a Sb precursor comprising aminostibanes having a general structure of:
 (R 1 R 2 N) 3 Sb 
 wherein R 1  and R 2  are alkyl groups having 1 to 10 carbons in linear, branched, or cyclic form; and 
 
     
     
         2 . The process of  claim 1 , wherein the organotellurol is selected from the group consisting of N-Butyltellurol-D and T-Butyltellurol-D. 
     
     
         3 . The process of  claim 1 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after each step of depositing; or after all three steps of depositing. 
     
     
         4 . The process of  claim 1 , wherein at least two depositing steps are carried out concurrently. 
     
     
         5 . The process of  claim 1 , wherein the depositing is carried out by a process selected from the group consisting of ALD, CVD, and cyclic CVD process. 
     
     
         6 . The process of  claim 2 , wherein the depositing is carried out by a process selected from the group consisting of ALD, CVD, and cyclic CVD process. 
     
     
         7 . A Te containing chalcogenide phase change material synthesized by the process of  claim 5 . 
     
     
         8 . A Te containing chalcogenide phase change material synthesized by the process of  claim 6 . 
     
     
         9 . A process of depositing Te containing chalcogenide phase change material on a substrate, comprising steps of: 
       depositing a Te precursor comprising a Te-containing composition having a general structure of:
 R″ 2 Te 
 wherein R″ is selected from the group consisting of hydrogen and deuterium; 
 
       depositing a Ge precursor comprising aminogermanes having a general structure of:
 (R 1 R 2 N) 4 Ge 
 wherein R 1  and R 2  are alkyl groups having 1 to 10 carbons in linear, branched, or cyclic form; and 
 
       depositing a Sb precursor comprising aminostibanes having a general structure of:
 (R 1 R 2 N) 3 Sb 
 wherein R 1  and R 2  are alkyl groups having 1 to 10 carbons in linear, branched, or cyclic form. 
 
     
     
         10 . The process of  claim 9 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after each step of depositing. 
     
     
         11 . The process of  claim 9 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after the three steps of depositing. 
     
     
         12 . The process of  claim 9 , wherein at least two depositing steps are carried out concurrently. 
     
     
         13 . The process of  claim 9 , wherein the depositing is carried out by a process selected from the group consisting of ALD, CVD, and cyclic CVD process. 
     
     
         14 . A Te containing chalcogenide phase change material synthesized by the process of  claim 13 . 
     
     
         15 . A process of depositing Te containing chalcogenide phase change material on a substrate, comprising steps of: 
       depositing a Te precursor comprising aminotellurium by reacting tellurium hexafluoride with ammonia; 
       depositing a Ge precursor comprising aminogermanes having a general structure of:
 (R 1 R 2 N) 4 Ge 
 wherein R 1  and R 2  are alkyl groups having 1 to 10 carbons in linear, branched, or cyclic form; and 
 
       depositing a Sb precursor comprising aminostibanes having a general structure of:
 (R 1 R 2 N) 3 Sb 
 wherein R 1  and R 2  are alkyl groups having 1 to 10 carbons in linear, branched, or cyclic form. 
 
     
     
         16 . The process of  claim 15 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after each step of depositing. 
     
     
         17 . The process of  claim 15 , wherein the process further comprising a step of introducing hydrogen or hydrogen plasma after all three steps of depositing. 
     
     
         18 . The process of  claim 15 , wherein at least two steps of depositing are carried out sequentially or concurrently. 
     
     
         19 . The process of  claim 15 , wherein the depositing is carried out by a process selected from the group consisting of ALD, CVD, and cyclic CVD process. 
     
     
         20 . A Te containing chalcogenide phase change material synthesized by the process  claim 19 .