Exhaust Unit, Substrate Processing Apparatus, and Method of Manufacturing Semiconductor Device

Abstract

Provided is a substrate processing apparatus capable of increasing a conductance of an exhaust system while preventing or suppressing an increase in footprint of an apparatus, thereby reducing a pressure thereof. The substrate processing apparatus includes a process container ( 203 ) configured to accommodate a plurality of substrates ( 200 ) stacked together, process gas supply units ( 232 a, 232 b, 249 a, and 249 b ) configured to supply process gases for processing the plurality of substrates ( 200 ) into the process container ( 203 ), and an exhaust unit ( 300 ) configured to exhaust the process container ( 203 ). The exhaust unit ( 300 ) includes a vacuum pump ( 246 ), and exhaust pipes configured to connect the process container ( 203 ) and the vacuum pump ( 246 ). At least a portion of the exhaust pipes has a rib structure ( 370 ), and includes pipes ( 331 to 333 ) in which cross-sections perpendicular to an exhaust direction have a rectangular or oval shape.

What is claimed is: 
     
         1 . An exhaust unit comprising:
 a first exhaust pipe connected to a process container configured to accommodate and process a substrate, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and   a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction.   
     
     
         2 . The exhaust unit of  claim 1 , wherein at least a portion of the second exhaust pipe comprises a rib structure. 
     
     
         3 . The exhaust unit of  claim 2 , wherein the rib structure is disposed at an inner side thereof. 
     
     
         4 . The exhaust unit of  claim 2 , wherein the rib structure is disposed at an outer side thereof. 
     
     
         5 . The exhaust unit of  claim 1 , wherein an aspect ratio of the cross-section of the second exhaust pipe is 8:1 or lower. 
     
     
         6 . A substrate processing apparatus comprising:
 a process container configured to accommodate a substrate;   a process gas supply system configured to supply a process gas for processing the substrate into the process container; and   an exhaust system configured to exhaust the process container,   wherein the exhaust system comprises:
 a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and 
 a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction. 
   
     
     
         7 . The substrate processing apparatus of  claim 6 , wherein at least a portion of the second exhaust pipe comprises a rib structure. 
     
     
         8 . The substrate processing apparatus of  claim 7 , wherein the rib structure is disposed at an inner side thereof. 
     
     
         9 . The substrate processing apparatus of  claim 7 , wherein the rib structure is disposed at an outer side thereof. 
     
     
         10 . The substrate processing apparatus of  claim 6 , wherein an aspect ratio of the cross-section of the second exhaust pipe is 8:1 or lower. 
     
     
         11 . The substrate processing apparatus of  claim 6 , wherein the gas supply system is configured to alternately and repeatedly supply at least two types of process gases into the process container without mixing the at least two types of process gases to form a film on the substrate. 
     
     
         12 . The substrate processing apparatus of  claim 11 , wherein at least one of the at least two types of process gases comprises a gas having a low vapor pressure. 
     
     
         13 . The substrate processing apparatus of  claim 11 , wherein the film comprises a high-k dielectric film. 
     
     
         14 . The substrate processing apparatus of  claim 6 , wherein an area of the cross-section of the second exhaust pipe is larger than that of the first exhaust pipe. 
     
     
         15 . The substrate processing apparatus of  claim 6 , wherein the substrates are stacked in plurality and processed in the process container. 
     
     
         16 . A method of manufacturing a semiconductor device, comprising:
 processing a substrate accommodated in a process container by supplying a process gas onto the substrate; and   exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction.   
     
     
         17 . The method of  claim 16 , wherein at least a portion of the second exhaust pipe comprises a rib structure. 
     
     
         18 . The method of  claim 16 , wherein the processing of the substrate comprises alternately and repeatedly supplying at least two types of process gases into the process container without mixing the at least two types of process gases to form a film on the substrate. 
     
     
         19 . The method of  claim 17 , wherein at least one of the at least two types of process gases comprises a gas having a low vapor pressure. 
     
     
         20 . The method of  claim 16 , wherein the film comprises a high-k dielectric film.