US2013146804A1PendingUtilityA1
Polishing composition and polishing method using same
Est. expiryAug 23, 2030(~4.1 yrs left)· nominal 20-yr term from priority
H10P 95/062H10P 95/04H10P 52/403C09K 3/1463C09K 3/1436C09G 1/02H10P 52/402C09K 3/1409
42
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Claims
Abstract
A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.
Claims
exact text as granted — not AI-modified1 . A polishing composition used in an application to polish silicon nitride, comprising colloidal silica in which an organic acid is immobilized, wherein the polishing composition has a pH of 6 or less.
2 . The polishing composition according to claim 1 , wherein the polishing composition has a ratio of the rate of polishing silicon nitride to the rate of polishing polycrystalline silicon of 2 or more.
3 . The polishing composition according to claim 1 , wherein the colloidal silica in which an organic acid is immobilized is colloidal silica in which a sulfonic acid is immobilized, and the colloidal silica in which a sulfonic acid is immobilized is obtained by coupling a silane coupling agent having a thiol group to colloidal silica, followed by oxidizing the thiol group.
4 . The polishing composition according to claim 1 , wherein the colloidal silica in which an organic acid is immobilized is colloidal silica in which a carboxylic acid is immobilized, and the colloidal silica in which a carboxylic acid is immobilized is obtained by coupling a silane coupling agent including photoreactive 2-nitrobenzyl ester to colloidal silica, followed by photoirradiation.
5 . A polishing method for polishing silicon nitride using the polishing composition according to claim 1 .Cited by (0)
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