US2013153820A1PendingUtilityA1
Method and Composition for Chemical Mechanical Planarization of a Metal-Containing Substrate
Est. expirySep 24, 2029(~3.2 yrs left)· nominal 20-yr term from priority
Inventors:Xiaobo Shi
H10P 52/403C09G 1/02C23F 1/26
48
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Claims
Abstract
A composition and associated method for chemical mechanical planarization of a metal-containing substrate afford low dishing levels in the polished substrate while simultaneously affording high metal removal rates. Suitable metal-containing substrates include tungsten- and copper-containing substrates. Components in the composition include a silatrane compound, an abrasive, and, optionally, a strong oxidizing agent, such as a per-compound.
Claims
exact text as granted — not AI-modified1 - 9 . (canceled)
10 . A polishing composition comprising:
a) an abrasive; b) a silatrane compound comprising a polycyclic compound and having at least one silicon atom present in a first bridgehead position and having at least one nitrogen atom present in a second bridgehead position; and c) an oxidizing agent.
11 . The composition of claim 10 wherein the silatrane compound has the structure:
where i, j, and m are each independently 1-4 and X is a substituent or group covalently bonded to the Si atom in the structure.
12 . The composition of claim 11 wherein X is selected from the group consisting of C 1 -C 4 -alkyl, C 1 -C 4 -alkoxy, C 1 -C 4 -amino, C 1 -C 4 -amino-alcohol, C 1 -C 4 -carboxylic acid, and C 1 -C 4 -glycol.
13 . The composition of claim 11 wherein the silatrane compound has the structure:
where n is 1-6.
14 . The composition of claim 13 wherein the silatrane compound has the structure:
15 . The composition of claim 10 wherein the polishing composition has a pH from about 1 to about 5.
16 . The composition of claim 10 wherein the oxidizing agent is hydrogen peroxide.Cited by (0)
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