US2013249066A1PendingUtilityA1

Electromigration-resistant lead-free solder interconnect structures

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Assignee: ARVIN CHARLES LPriority: Mar 23, 2012Filed: Mar 23, 2012Published: Sep 26, 2013
Est. expiryMar 23, 2032(~5.7 yrs left)· nominal 20-yr term from priority
Inventors:Charles L. ArvinKenneth BirdCharles C. GoldsmithSung K. KangMinhua LuClare J. MccarthyEric D. PerfectoSrinivasa S. N. ReddyKrystyna W. SemkowThomas A. Wassick
H10W 74/00H10W 72/29H10W 72/923H10W 72/019H10W 72/0112H10W 72/07236H10W 72/072H10W 72/241H10W 90/724H10W 72/255H10W 72/223H10W 72/245H10W 72/252H10W 72/222H10W 72/244H10W 72/234H10W 72/01257H10W 72/012H10W 72/01251H10W 72/01235H10W 72/01255H10W 72/01223H10W 72/01212H10W 72/01204H10P 95/00H10W 72/90H10W 20/038
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Claims

Abstract

Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An interconnect structure comprising:
 a semiconductor substrate having a last metal layer;   a copper pedestal having a first end coupled to the last metal layer, at least one side, and a second end;   a barrier layer formed on the second end of the copper pedestal;   a barrier protection layer formed on the barrier layer; and   a lead-free solder layer, wherein one or more of the at least one side of the copper pedestal directly contacts the solder layer.   
     
     
         2 . The structure of  claim 1 , wherein the barrier protection layer comprises copper. 
     
     
         3 . The structure of  claim 1 , wherein the barrier protection layer comprises copper-containing intermetallic. 
     
     
         4 . The structure of  claim 1 , wherein the barrier protection layer is 0.5 μm to 3μm thick. 
     
     
         5 . The structure of  claim 1 , wherein the copper pedestal is 8 μm to 12 μm thick. 
     
     
         6 . The structure of  claim 1 , wherein the barrier layer comprises a material selected from the group consisting of nickel, iron, nickel-iron, and cobalt. 
     
     
         7 . The structure of  claim 1 , wherein the barrier layer 1 μm to 3 μm thick. 
     
     
         8 . The structure of  claim 1 , wherein the solder layer comprises tin-silver. 
     
     
         9 - 23 . (canceled)

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