Resistive random access memory and method of manufacturing the same

Abstract

Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.

What is claimed is: 
     
         1 . A method of manufacturing a resistive random access memory, comprising:
 forming a lower electrode;   forming a resistive layer on the lower electrode;   doping the resistive layer with a transition metal using an implantation process; and   forming an upper electrode on the resistive layer.   
     
     
         2 . The method of  claim 1 , wherein the lower electrode is formed of a metal or a metal oxide. 
     
     
         3 . The method of  claim 2 , wherein the metal includes at least one element selected from the group consisting of Al, Hf, Zr, Zn, W, Co, Au, Pt, Ru, Ir, and Ti. 
     
     
         4 . The method of  claim 1 , wherein the resistive layer is formed of a transition metal oxide. 
     
     
         5 . The method of  claim 4 , wherein the transition metal oxide includes at least one compound selected from the group consisting of NiO, TiO 2 , HfO, ZrO, ZnO, WO 3 , CoO, CuO, and Nb 2 O 5 . 
     
     
         6 . The method of  claim 1 , wherein the transition metal dopant includes at least one element selected from the group consisting of Ni, Ti, Hf, Zr, Zn, Cu, W, Co, and Nb. 
     
     
         7 . The method of  claim 1 , wherein the transition metal dopant is concentrated in a grain boundary in the resistive layer to form a filament as a current path. 
     
     
         8 . The method of  claim 1 , wherein the resistive layer is formed of NiO at an oxygen partial pressure of about 25% or more, and the transition metal dopant is Ni. 
     
     
         9 . The method of  claim 1 , wherein the upper electrode is formed of a metal or a metal oxide. 
     
     
         10 . The method of  claim 9 , wherein the metal includes at least one element selected from the group consisting of Al, Hf, Zr, Zn, W, Co, Au, Pt, Ru, Ir, and Ti.