Inventor · disambiguated record
Myoung-Jae Lee
Also filed as: LEE MYOUNG-JAE
54 granted patents·17 pending applications·365 citations·filing 2004–2024
98Inventor score
Top patents by PatentIndex Score
71 records- 0197US8009454B2Resistance random access memory device and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 30, 2011·67 cites·10 claims
- 0293US7602042B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·26 cites·21 claims
- 0390US7521704B2Memory device using multi-layer with a graded resistance changeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·20 cites·13 claims
- 0488US9484087B2Multi-bit memory elements, memory devices including the same, and methods of manufacturing the sameLEE CHANG-BUM·Filed 2012·Granted Nov 1, 2016·7 cites·35 claims
- 0587US7998804B2Nonvolatile memory device including nano dot and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 16, 2011·9 cites·9 claims
- 0687US7400027B2Nonvolatile memory device having two or more resistance elements and methods of forming and using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·18 cites·7 claims
- 0786US8274067B2Memory devices and methods of manufacturing the sameAHN SEUNG-EON·Filed 2008·Granted Sep 25, 2012·10 cites·28 claims
- 0886US7935953B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 3, 2011·11 cites·16 claims
- 0985US8861253B2Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor deviceCHANG MAN·Filed 2011·Granted Oct 14, 2014·10 cites·28 claims
- 1085US7414295B2Transistor and method of operating transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 19, 2008·8 cites·14 claims
- 1184US8466461B2Resistive random access memory and method of manufacturing the sameSEO SUN-AE·Filed 2007·Granted Jun 18, 2013·12 cites·11 claims
- 1283US8537591B2Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devicesKIM YOUNG-BAE·Filed 2010·Granted Sep 17, 2013·9 cites·33 claims
- 1383US7935952B2Non-volatile memory device having threshold switching resistor, memory array including the non-volatile memory device and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 3, 2011·7 cites·29 claims
- 1483US7635628B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 22, 2009·9 cites·10 claims
- 1582US8456900B2Memory devices and methods of operating the sameLEE MYOUNG-JAE·Filed 2010·Granted Jun 4, 2013·7 cites·30 claims
- 1682US8203863B2Nonvolatile memory cells and nonvolatile memory devices including the sameKIM HO-JUNG·Filed 2010·Granted Jun 19, 2012·8 cites·21 claims
- 1780US8947905B2Nonvolatile memory devices and methods of driving the sameCHANG MAN·Filed 2012·Granted Feb 3, 2015·7 cites·22 claims
- 1880US8773888B2Method of operating semiconductor device including variable resistance deviceCHANG MAN·Filed 2012·Granted Jul 8, 2014·7 cites·26 claims
- 1978US7989791B2Diode structure and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 2, 2011·7 cites·12 claims
- 2078US7791923B2Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory elementSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·17 claims
- 2178US7759771B2Resistance random access memory and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·8 cites·19 claims
- 2277US9570359B2Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 14, 2017·3 cites·14 claims
- 2376US8350247B2Resistive random access memory having a solid solution layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 8, 2013·6 cites·11 claims
- 2476US8035095B2Resistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 11, 2011·6 cites·8 claims
- 2576US7714313B2Resistive RAM having at least one varistor and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 11, 2010·9 cites·28 claims
- 2676US7663136B2Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·2 cites·6 claims
- 2773US8772750B2Non-volatile memory elements and memory devices including the sameLEE CHANG-BUM·Filed 2011·Granted Jul 8, 2014·5 cites·36 claims
- 2873US8105884B2Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing mastersLEE BYUNG-KYU·Filed 2009·Granted Jan 31, 2012·8 cites·8 claims
- 2973US7936044B2Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 3, 2011·4 cites·26 claims
- 3072US8101983B2Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the sameSEO SUN-AE·Filed 2007·Granted Jan 24, 2012·7 cites·8 claims
- 3169US8611131B2Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor deviceCHANG MAN·Filed 2011·Granted Dec 17, 2013·4 cites·30 claims
- 3269US8586962B2Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing mastersLEE BYUNG-KYU·Filed 2011·Granted Nov 19, 2013·2 cites·6 claims
- 3367US7943926B2Nonvolatile memory device and nonvolatile memory array including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 17, 2011·5 cites·9 claims
- 3467US7821809B2Nonvolatile memory device and method including resistor and transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 26, 2010·6 cites·15 claims
- 3567US7691441B2Method of forming carbon fibers using metal-organic chemical vapor depositionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 6, 2010·1 cites·16 claims
- 3665US8890228B2Semiconductor device and method of manufacturing the sameLEE MYOUNG-JAE·Filed 2008·Granted Nov 18, 2014·3 cites·18 claims
- 3764US7638361B2Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 29, 2009·1 cites·10 claims
- 3863US8350262B2Nonvolatile memory device and nonvolatile memory array including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 8, 2013·2 cites·12 claims
- 3963US2025214463A1Method and apparatus for preventing vehicle charging overheatingHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 4060US9001551B2Semiconductor devices including variable resistance elements and methods of operating semiconductor devicesCHANG MAN·Filed 2012·Granted Apr 7, 2015·2 cites·25 claims
- 4157US8586978B2Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory deviceKIM KI-HWAN·Filed 2008·Granted Nov 19, 2013·1 cites·14 claims
- 4256US9425104B2Complementary metal oxide semiconductor device and method of manufacturing the sameYANG MOON-SEUNG·Filed 2014·Granted Aug 23, 2016·1 cites·17 claims
- 4356US9306008B2Semiconductor device and method of fabricating the sameLEE DONG-SOO·Filed 2014·Granted Apr 5, 2016·0 cites·18 claims
- 4455US8164130B2Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the sameSEO SUN-AE·Filed 2004·Granted Apr 24, 2012·7 cites·9 claims
- 4555US2013252395A1Resistive random access memory and method of manufacturing the sameSEO SUN-AE·Filed 2013·Application pending·0 cites
- 4655US2023309563A1Antibacterial composite with instant sterilization capability, and preparation method thereforOSANGJAIEL CO LTD·Filed 2021·Application pending·0 cites
- 4754US8445882B2Non-volatile memory element and memory device including the sameLEE DONG-SOO·Filed 2011·Granted May 21, 2013·1 cites·40 claims
- 4853US11038102B2Artificial synapse device and method of manufacturing the sameDAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECH·Filed 2019·Granted Jun 15, 2021·0 cites·16 claims
- 4953US9929239B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 27, 2018·0 cites·17 claims
- 5053US9099304B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 4, 2015·0 cites·18 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →