Plasma Etch Resistant, Highly Oriented Yttria Films, Coated Substrates and Related Methods

Abstract

Included within the scope of the invention are plasma etch-resistant films for substrates. The films include a yttria material and a at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. Also included are methods of manufacturing plasma etch-resistant films on a substrate. Such methods include applying a yttria material-containing composition onto at least a portion of a surface of a substrate to form a film. The film includes a yttria material and at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}.

1 . A plasma etch-resistant film for a substrate comprising a yttria material wherein at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. 
     
     
         2 . The film of  claim 1 , wherein 50% or more of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. 
     
     
         3 . The film of  claim 1 , wherein 90% or more of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. 
     
     
         4 . The film of  claim 1 , wherein 95% or more of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. 
     
     
         5 . The film of  claim 1 , wherein 98% or more or more of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. 
     
     
         6 . The film of  claim 1 , wherein the substrate is chosen from silica, fused silica, quartz, fused quartz, alumina, sapphire, silicon, aluminum, anodized aluminum, zirconium oxide, and aluminum alloy. 
     
     
         7 . The film of  claim 6 , wherein the substrate is a semiconductor processing apparatus component. 
     
     
         8 . The film of  claim 7 , wherein semiconductor processing apparatus component is selected from a chamber wall, a chamber floor, a screw, a wafer boat, a fastener, a window, a dispersion disc, a shower head, a focus ring, an inner ring, an outer ring, a capture ring, an insert ring, a gas transfer tube, and a heater block. 
     
     
         9 . The film of  claim 1 , wherein the film has a thickness of about 0.5 microns to about 30 microns. 
     
     
         10 . The film of  claim 1 , wherein the film has a thickness of about 5 microns to about 20 microns. 
     
     
         11 . The film of  claim 1 , wherein the film has a thickness of about 10 microns to about 17 microns. 
     
     
         12 . The film of  claim 1 , wherein the yttria material is yttria. 
     
     
         13 . The film of  claim 1 , wherein the yttria material is a yttria-derived composite. 
     
     
         14 . The film of  claim 13 , wherein the yttria-derived composite is selected from yttrium aluminum garnet and yttrium aluminum perovskite. 
     
     
         15 . The film of  claim 1 , wherein the film is formed using a process selected from electron beam vapor deposition, electron beam evaporation, sputtering, plasma spraying, and chemical vapor deposition (CVD). 
     
     
         16 . The film of  claim 15 , wherein the process is carried out when the substrate has a temperature of about 21° C. to about 500° C. 
     
     
         17 . The film of  claim 15 , wherein the process is carried out when the substrate has a temperature of about 100° C. to about 500° C. 
     
     
         18 . The film of  claim 15 , wherein the process is carried out when the substrate has a temperature of about 400° C. to about 500° C. 
     
     
         19 . The film of  claim 1 , wherein upon exposure to a fluorine-containing environment, a crack or a fissure present in the film is self-repaired. 
     
     
         20 . A method of manufacturing a plasma etch-resistant film on a substrate comprising depositing a yttria material-containing composition onto at least a portion of a surface of a substrate to form a film, wherein the film comprises a yttria material and at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. 
     
     
         21 .- 75 . (canceled)