Conductive chip disposed on lead semiconductor package and methods of making the same

Abstract

In one implementation, a method of forming a conductive device can include depositing a non-conductive epoxy on a first portion of a lower surface of a semiconductor die, and can include depositing a conductive epoxy on a second portion of the lower surface of the semiconductor die.

1 .- 13 . (canceled) 
     
     
         14 . A method of forming a conductive device, comprising:
 depositing a non-conductive epoxy on a first portion of a lower surface of a semiconductor die; and   depositing a conductive epoxy on a second portion of the lower surface of the semiconductor die.   
     
     
         15 . The method of  claim 14 , further comprising:
 disposing at least a portion of a lead within a portion of the non-conductive epoxy after the deposing of the non-conductive epoxy.   
     
     
         16 . The method of  claim 14 , further comprising:
 melting a portion of the non-conductive epoxy; and   disposing at least a portion of a lead within the portion of the non-conductive epoxy.   
     
     
         17 . The method of  claim 14 , wherein the depositing a non-conductive epoxy on a first portion of a lower surface of a semiconductor die includes placing a stencil proximate the lower surface of the semiconductor die. 
     
     
         18 . The method of  claim 14 , wherein the depositing a non-conductive epoxy on a first portion of a lower surface of a semiconductor die includes placing a first stencil proximate the lower surface of the semiconductor die, the depositing a conductive epoxy on a second portion of the lower surface of the semiconductor die includes placing a second stencil proximate the lower surface of the semiconductor die. 
     
     
         19 . The method of  claim 14 , further comprising:
 disposing a molding material about at least a portion of the semiconductor die.   
     
     
         20 . The method of  claim 14 , further comprising:
 disposing a molding material about at least a portion of the semiconductor die such that the conductive epoxy is disposed outside of the molding.   
     
     
         21 . A method, comprising:
 forming a semiconductor die having an upper surface and a lower surface opposite the upper surface;   forming a lead electrically coupled to the upper surface of the semiconductor die;   depositing a non-conductive material on a first portion of the lower surface of the semiconductor die; and   depositing a conductive material on a second portion of the lower surface of the semiconductor die.   
     
     
         22 . The method of  claim 21 , wherein a wire of conductive material extends from the lead to the upper surface of the semiconductor die to electrically couple the lead to the upper surface of the semiconductor die. 
     
     
         23 . The method of  claim 21 , wherein the semiconductor die is a vertical transistor. 
     
     
         24 . The method of  claim 21 , wherein the semiconductor die includes an epitaxial layer, a vertical axis disposed perpendicular to the epitaxial layer extends though a portion of the epitaxial layer, a portion of the semiconductor die, a portion of the non-conductive material, and a portion of the lead. 
     
     
         25 . The method of  claim 21 , wherein the lead includes an upper surface, a portion of the non-conductive material being disposed between the upper surface of the lead and the lower surface of the semiconductor die. 
     
     
         26 . The method of  claim 21 , wherein the lead is a first lead and is electrically coupled to the semiconductor die adjacent a first side of the semiconductor die,
 the method further comprising:   forming a second lead electrically coupled to the upper surface of the semiconductor die adjacent a second side of the semiconductor die, the second side of the semiconductor die being opposite the first side of the semiconductor die, a distance between the first side of the semiconductor die and the second side of the semiconductor die being greater than a distance between the first lead and the second lead.   
     
     
         27 . The method of  claim 21 , further comprising:
 forming a housing containing at least a portion of the semiconductor die,   the conductive material extending from the lower surface to a location outside of the housing.   
     
     
         28 . The method of  claim 21 , wherein a horizontal axis extends substantially parallel to the lower surface of the semiconductor die, the horizontal axis extends through a portion of the non-conductive material and through a portion of the conductive material. 
     
     
         29 . The method of  claim 21 , wherein the semiconductor die includes a drain contact disposed proximate the lower surface of the semiconductor die. 
     
     
         30 . A method, comprising:
 forming a semiconductor die including a vertical transistor device having an upper surface and a lower surface opposite the upper surface;   forming a lead having an upper surface being electrically coupled to the upper surface of the semiconductor die; and   forming a non-conductive material on a portion of the lower surface of the semiconductor die.   
     
     
         31 . The method of  claim 30 , wherein at least a portion of the non-conductive material is disposed between the lower surface of the semiconductor die and the upper surface of the lead. 
     
     
         32 . The method of  claim 30 , further comprising:
 forming a conductive material disposed on a portion of the lower surface of the semiconductor die.   
     
     
         33 . The method of  claim 30 , wherein a wire of conductive material extends from the upper surface of the lead to the upper surface of the semiconductor die to electrically couple the upper surface of the lead to the upper surface of the semiconductor die. 
     
     
         34 . The method of  claim 30 , further comprising:
 forming an epitaxial layer, a vertical axis disposed perpendicular to the epitaxial layer extends though a portion of the epitaxial layer, a portion of the semiconductor die, a portion of the non-conductive material, and a portion of the lead.   
     
     
         35 . The method of  claim 30 , wherein the lead is a first lead and is electrically coupled to the semiconductor die adjacent a first side of the semiconductor die,
 the method further comprising:   forming a second lead electrically coupled to the upper surface of the semiconductor die adjacent a second side of the semiconductor die, the second side of the semiconductor die being opposite the first side of the semiconductor die, a distance between the first side of the semiconductor die and the second side of the semiconductor die being greater than a distance between the first lead and the second lead.