Dielectric device

Abstract

A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.

What is claimed is: 
     
         1 . A dielectric device comprising:
 a first electrode film having a non-oriented or amorphous structure;   a dielectric film provided on the first electrode film and having a preferentially oriented structure; and   a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.   
     
     
         2 . The dielectric device according to  claim 1 , wherein the dielectric film is (001), (101), or (110) preferentially oriented. 
     
     
         3 . The dielectric device according to  claim 1 , wherein the dielectric film is a piezoelectric material. 
     
     
         4 . The dielectric device according to  claim 1 , wherein an oxidation-reduction potential of every metal element forming the first and second electrode films is higher than an oxidation-reduction potential of every metal element forming the dielectric film. 
     
     
         5 . The dielectric device according to  claim 1 , wherein the first and second electrode films are composed of one selected from Al, Ti, Zr, Ta, Cr, Co, and Ni. 
     
     
         6 . The dielectric device according to  claim 1 , wherein the first and second electrode films are composed of an alloy containing at least one selected from Al, Ti, Zr, Ta, Cr, Co, and Ni. 
     
     
         7 . The dielectric device according to  claim 1 , wherein one principal surface of the dielectric film is in contact with the first electrode film and the other principal surface of the dielectric film is in contact with the second electrode film. 
     
     
         8 . The dielectric device according to  claim 1 , further comprising: an intermediate film composed of an element selected from Al, Ti, Zr, Ta, Cr, Co, and Ni, between the dielectric film and at least one said electrode film. 
     
     
         9 . The dielectric device according to  claim 8 , wherein the intermediate film is in contact with the electrode film and the dielectric film. 
     
     
         10 . The dielectric device according to  claim 8 , further comprising an electroconductive oxide film between the dielectric film and at least one said electrode film. 
     
     
         11 . The dielectric device according to  claim 10 , wherein the intermediate film or the electroconductive oxide film is in contact with the dielectric film. 
     
     
         12 . The dielectric device according to  claim 1 , further comprising a metal film having a preferentially oriented structure, between the second electrode film and the dielectric film, wherein the metal film is in contact with the second electrode film and the dielectric film. 
     
     
         13 . The dielectric device according to  claim 1 , wherein thicknesses of the first and second electrode films are in the range of 100 nm to 200 nm. 
     
     
         14 . The dielectric device according to  claim 1 , wherein the dielectric film is one such that in X-ray diffraction measurement, an intensity of a peak ascribed to a certain crystal lattice plane is not less than 50% of a total of intensities of all peaks. 
     
     
         15 . The dielectric device according to  claim 1 , wherein the dielectric film is one such that in X-ray diffraction measurement, an intensity of a peak ascribed to a certain crystal lattice plane is not less than 80% of a total of intensities of all peaks. 
     
     
         16 . The dielectric device according to  claim 1 , wherein the first electrode film and the second electrode film are films such that in X-ray diffraction measurement, an intensity of a peak ascribed to any crystal lattice plane is less than 50% of a total of intensities of all peaks. 
     
     
         17 . The dielectric device according to  claim 1 , wherein the first electrode film and the second electrode film are films such that in X-ray diffraction measurement, an intensity of a peak ascribed to any crystal lattice plane is not more than 10% of a total of intensities of all peaks.