SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOx

Abstract

A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.

Having fully described the invention in such clear and concise terms as to enable those skilled in the art to understand and practice the same, the invention claimed is: 
     
         1 - 9 . (canceled) 
     
     
         10 . A III-N on silicon wafer comprising:
 a crystalline silicon substrate;   a layer of rare earth metal deposited on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C., the rare earth metal forming a layer of rare earth silicide on the substrate, the layer of rare earth silicide being transformed by annealing into a layer of amorphous silicon and an intermediate layer of rare earth oxide positioned between the substrate and the first layer of rare earth oxide; and   a first layer of rare earth oxide deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate.   
     
     
         11 . A III-N on silicon wafer as claimed in  claim 10  further including a second layer of rare earth oxide with a structure and lattice constant substantially similar to the substrate, the second layer of rare earth oxide positioned on the first layer of rare earth oxide to form a template for the subsequent deposition of a III-N semiconductor material. 
     
     
         12 . A III-N on silicon wafer as claimed in  claim 11  further including a layer of III-N semiconductor material positioned on the second layer of rare earth oxide, the III-N semiconductor material having a structure and lattice constant substantially similar to the substrate. 
     
     
         13 . A III-N on silicon wafer as claimed in  claim 12  wherein the second layer of rare earth oxide includes gadolinium. 
     
     
         14 . A III-N on silicon wafer as claimed in  claim 13  wherein the layer of III-N semiconductor material includes gallium.