Inventor · disambiguated record
Rytis Dargis
Also filed as: DARGIS RYTIS
39 granted patents·10 pending applications·174 citations·filing 2011–2022
97Inventor score
Top patents by PatentIndex Score
49 records- 0195US8796121B1Stress mitigating amorphous SiO2 interlayerDARGIS RYTIS·Filed 2013·Granted Aug 5, 2014·23 cites·13 claims
- 0294US8846504B1GaN on Si(100) substrate using epi-twistDARGIS RYTIS·Filed 2013·Granted Sep 30, 2014·21 cites·8 claims
- 0394US8501635B1Modification of REO by subsequent III-N EPI processCLARK ANDREW·Filed 2012·Granted Aug 6, 2013·20 cites·20 claims
- 0492US8633569B1AlN inter-layers in III-N material grown on REO/silicon substrateARKUN ERDEM·Filed 2013·Granted Jan 21, 2014·15 cites·17 claims
- 0592US8394194B1Single crystal reo buffer on amorphous SiOxDARGIS RYTIS·Filed 2012·Granted Mar 12, 2013·13 cites·9 claims
- 0690US9142406B1III-N material grown on ErAlN buffer on Si substrateDARGIS RYTIS·Filed 2014·Granted Sep 22, 2015·13 cites·16 claims
- 0789US10075143B2Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitrideIQE PLC·Filed 2016·Granted Sep 11, 2018·6 cites·47 claims
- 0889US8748900B1Re-silicide gate electrode for III-N device on Si substrateTRANSLUCENT INC·Filed 2013·Granted Jun 10, 2014·10 cites·20 claims
- 0988US8878188B2REO gate dielectric for III-N device on Si substrateDARGIS RYTIS·Filed 2013·Granted Nov 4, 2014·9 cites·21 claims
- 1087US8823055B2REO/ALO/A1N template for III-N material growth on siliconARKUN ERDEM·Filed 2012·Granted Sep 2, 2014·8 cites·10 claims
- 1186US10605987B2Re-based integrated photonic and electronic layered structuresIQE PLC·Filed 2019·Granted Mar 31, 2020·4 cites·21 claims
- 1286US8680507B1A1N inter-layers in III-N material grown on DBR/silicon substrateARKUN ERDEM·Filed 2013·Granted Mar 25, 2014·9 cites·13 claims
- 1386US8636844B1Oxygen engineered single-crystal REO templateDARGIS RYTIS·Filed 2012·Granted Jan 28, 2014·7 cites·6 claims
- 1479US8823025B1III-N material grown on AIO/AIN buffer on Si substrateARKUN ERDEM·Filed 2013·Granted Sep 2, 2014·4 cites·18 claims
- 1577US10566944B2Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitrideIQE PLC·Filed 2018·Granted Feb 18, 2020·2 cites·10 claims
- 1677US9917193B2III-N semiconductor layer on Si substrateDARGIS RYTIS·Filed 2016·Granted Mar 13, 2018·2 cites·5 claims
- 1774US10332857B2Rare earth pnictides for strain managementIQE PLC·Filed 2017·Granted Jun 25, 2019·1 cites·19 claims
- 1873US11063114B2III-N to rare earth transition in a semiconductor structureIQE PLC·Filed 2019·Granted Jul 13, 2021·1 cites·22 claims
- 1973US10128350B2Integrated epitaxial metal electrodesIQE PLC·Filed 2017·Granted Nov 13, 2018·1 cites·29 claims
- 2070US8872308B2AlN cap grown on GaN/REO/silicon substrate structureARKUN ERDEM·Filed 2013·Granted Oct 28, 2014·2 cites·15 claims
- 2166US12382690B2Structure and method using a single crystalline bixbyite oxide layer in a orientationIQE PLC·Filed 2022·Granted Aug 5, 2025·0 cites·15 claims
- 2265US9236249B2III-N material grown on REN epitaxial buffer on Si substrateDARGIS RYTIS·Filed 2013·Granted Jan 12, 2016·1 cites·23 claims
- 2364US9496132B2Nucleation of III-N on REO templatesTRANSLUCENT INC·Filed 2013·Granted Nov 15, 2016·1 cites·17 claims
- 2464US8835955B2IIIOxNy on single crystal SOI substrate and III n growth platformARKUN ERDEM·Filed 2011·Granted Sep 16, 2014·1 cites·18 claims
- 2560US10825912B2Integrated epitaxial metal electrodesIQE PLC·Filed 2018·Granted Nov 3, 2020·0 cites·39 claims
- 2659US11133389B2Pnictide nanocomposite structure for lattice stabilizationIQE PLC·Filed 2020·Granted Sep 28, 2021·0 cites·18 claims
- 2759US10615141B2Pnictide buffer structures and devices for GaN base applicationsIQE PLC·Filed 2017·Granted Apr 7, 2020·0 cites·15 claims
- 2857US9824886B2Stress mitigating amorphous SiO2 interlayerTRANSLUCENT INC·Filed 2014·Granted Nov 21, 2017·0 cites·8 claims
- 2955US9460917B2Method of growing III-N semiconductor layer on Si substrateDARGIS RYTIS·Filed 2014·Granted Oct 4, 2016·0 cites·15 claims
- 3055US2012183767A1Hexagonal reo template buffer for iii-n layers on siliconDARGIS RYTIS·Filed 2011·Application pending·0 cites
- 3153US8664735B2IR sensor using REO up-conversionARKUN ERDEM·Filed 2011·Granted Mar 4, 2014·0 cites·23 claims
- 3253US2022102504A1A pnictide nanocomposite structure for lattice stabilizationIQE PLC·Filed 2020·Application pending·0 cites
- 3352US11757008B2Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductorIQE PLC·Filed 2019·Granted Sep 12, 2023·0 cites·27 claims
- 3451US11495670B2Integrated epitaxial metal electrodesIQE PLC·Filed 2019·Granted Nov 8, 2022·0 cites·20 claims
- 3551US10573686B2Epitaxial AIN/cREO structure for RF filter applicationsIQE PLC·Filed 2017·Granted Feb 25, 2020·0 cites·15 claims
- 3650US10418457B2Metal electrode with tunable work functionsIQE PLC·Filed 2018·Granted Sep 17, 2019·0 cites·20 claims
- 3750US2013334536A1SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOxDARGIS RYTIS·Filed 2013·Application pending·0 cites
- 3849US9139934B2REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrateDARGIS RYTIS·Filed 2014·Granted Sep 22, 2015·0 cites·30 claims
- 3948US9443939B2Strain compensated REO buffer for III-N on siliconDARGIS RYTIS·Filed 2015·Granted Sep 13, 2016·0 cites·14 claims
- 4048US9431526B2Heterostructure with carrier concentration enhanced by single crystal REO induced strainsDARGIS RYTIS·Filed 2014·Granted Aug 30, 2016·0 cites·29 claims
- 4148US2013099357A1Strain compensated reo buffer for iii-n on siliconDARGIS RYTIS·Filed 2011·Application pending·0 cites
- 4247US8994032B2III-N material grown on ErAIN buffer on Si substrateARKUN ERDEM·Filed 2013·Granted Mar 31, 2015·0 cites·10 claims
- 4344US2016181093A1Iii-n epitaxy on multilayer buffer with protective top layerDARGIS RYTIS·Filed 2014·Application pending·0 cites
- 4443US10923345B2Epitaxial metal oxide as buffer for epitaxial III-V layersIQE PLC·Filed 2017·Granted Feb 16, 2021·0 cites·15 claims
- 4543US2020388489A1Integrated epitaxial metal electrodes for modified devicesIQE PLC·Filed 2019·Application pending·0 cites
- 4643US2014225123A1REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICONARKUN ERDEM·Filed 2014·Application pending·0 cites
- 4739US2012280276A1Single Crystal Ge On SiDARGIS RYTIS·Filed 2012·Application pending·0 cites
- 4837US2019122885A1Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layersDARGIS RYTIS·Filed 2017·Application pending·0 cites
- 4935US2013062609A1Iii-n fet on silicon using field suppressing reoSMITH ROBIN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →