A pnictide nanocomposite structure for lattice stabilization

Abstract

A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.

1 . A layered structure comprising:
 a substrate;   a distortion layer having a first lattice constant and being epitaxially grown over the substrate, wherein the distortion layer comprises a plurality of nanocomposites that modify the first lattice constant of the distortion layer; and   a stabilization layer having a second lattice constant and being epitaxially grown over the distortion layer, wherein a second lattice constant of the stabilization layer is lattice matched to the first lattice constant modified by the plurality of nanocomposites of the distortion layer.   
     
     
         2 . The layered structure of  claim 1 , wherein:
 the plurality of nanocomposites form a plurality of pockets in the distortion layer, and   each pocket of the plurality of pockets modify the first lattice constant in a respective local region of the distortion layer.   
     
     
         3 . The layered structure of  claim 1 , wherein the plurality of nanocomposites comprises a first species of nanocomposites and a second species of nanocomposites different from the first species of nanocomposites. 
     
     
         4 . The layered structure of  claim 1 , wherein the plurality of nanocomposites comprises RE pnictide. 
     
     
         5 . The layered structure of  claim 1 , wherein the stabilization layer has a homogenous crystal structure. 
     
     
         6 . The layered structure of  claim 1 , wherein the stabilization layer comprises III-V semiconductors. 
     
     
         7 . The layered structure of  claim 6 , wherein the III-V semiconductors in the stabilization layer comprise III-V alloy and wherein the III-V alloy is a In x Ga y Al z As n P m  alloy. 
     
     
         8 . (canceled) 
     
     
         9 . The layered structure of  claim 1 , further comprising a semiconductor layer epitaxially grown over the stabilization layer. 
     
     
         10 . The layered structure of  claim 9 , wherein the semiconductor layer comprises a Group III element and a Group V element. 
     
     
         11 . The layered structure of  claim 1 , wherein the substrate comprises GaAs. 
     
     
         12 . The layered structure of  claim 1 , wherein the distortion layer comprises a shared element with the substrate. 
     
     
         13 . (canceled) 
     
     
         14 . The layered structure of  claim 1 , further comprising a stack, wherein the stack comprises up to 40 units of the distortion layer and the stabilization layer. 
     
     
         15 . The layered structure of  claim 14 , wherein the stack comprises nanocomposites of varying elements, sizes, and densities. 
     
     
         16 . The layered structure of  claim 1 , wherein the distortion layer comprises Group III elements and a Group V element. 
     
     
         17 . The layered structure of  claim 1 , further comprising a dislocation filter over the stabilization layer. 
     
     
         18 . The layered structure of  claim 1 , wherein the distortion layer has a sheet resistivity of greater than 25,000 ohm-cm. 
     
     
         19 . A layered structure comprising:
 a substrate;   a first semiconductor layer epitaxially grown over the substrate;   a dislocation filter epitaxially grown over the first semiconductor layer; and   a second semiconductor layer epitaxially grown over the dislocation filter,   wherein the dislocation filter comprises a plurality of nanocomposites.   
     
     
         20 . The layered structure of  claim 1 , further comprising a second distortion layer, wherein the second distortion layer comprises a plurality of nanocomposites that modify the lattice constant of the second distortion layer. 
     
     
         21 . The layered structure of  claim 20 , wherein the distortion layer or the second distortion layer includes multiple sublayers, and wherein some of the sublayers have pockets of nanocomposites. 
     
     
         22 . The layered structure of  claim 21 , wherein a distribution, density or size of the nanocomposites is different across different sublayers.