Inventor · disambiguated record
Rodney Pelzel
Also filed as: Pelzel Rodney
19 granted patents·7 pending applications·25 citations·filing 2016–2023
90Inventor score
Top patents by PatentIndex Score
26 records- 0189US10075143B2Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitrideIQE PLC·Filed 2016·Granted Sep 11, 2018·6 cites·47 claims
- 0286US10605987B2Re-based integrated photonic and electronic layered structuresIQE PLC·Filed 2019·Granted Mar 31, 2020·4 cites·21 claims
- 0384US9768339B2Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAsIQE PLC·Filed 2016·Granted Sep 19, 2017·8 cites·28 claims
- 0478US11201451B2Porous distributed Bragg reflectors for laser applicationsIQE PLC·Filed 2019·Granted Dec 14, 2021·1 cites·21 claims
- 0577US10566944B2Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitrideIQE PLC·Filed 2018·Granted Feb 18, 2020·2 cites·10 claims
- 0676US11355340B2Semiconductor material having tunable permittivity and tunable thermal conductivityIQE PLC·Filed 2020·Granted Jun 7, 2022·1 cites·28 claims
- 0774US10332857B2Rare earth pnictides for strain managementIQE PLC·Filed 2017·Granted Jun 25, 2019·1 cites·19 claims
- 0873US11063114B2III-N to rare earth transition in a semiconductor structureIQE PLC·Filed 2019·Granted Jul 13, 2021·1 cites·22 claims
- 0973US10128350B2Integrated epitaxial metal electrodesIQE PLC·Filed 2017·Granted Nov 13, 2018·1 cites·29 claims
- 1061US2022254631A1Porous rf switch for reduced crosstalkIQE PLC·Filed 2022·Application pending·0 cites
- 1160US10825912B2Integrated epitaxial metal electrodesIQE PLC·Filed 2018·Granted Nov 3, 2020·0 cites·39 claims
- 1259US11133389B2Pnictide nanocomposite structure for lattice stabilizationIQE PLC·Filed 2020·Granted Sep 28, 2021·0 cites·18 claims
- 1359US10615141B2Pnictide buffer structures and devices for GaN base applicationsIQE PLC·Filed 2017·Granted Apr 7, 2020·0 cites·15 claims
- 1455US11611001B2Localized strain fields in epitaxial layer over cREOIQE PLC·Filed 2021·Granted Mar 21, 2023·0 cites·17 claims
- 1555US2023245884A1Layered structureIQE PLC·Filed 2023·Application pending·0 cites
- 1653US2022102504A1A pnictide nanocomposite structure for lattice stabilizationIQE PLC·Filed 2020·Application pending·0 cites
- 1752US11757008B2Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductorIQE PLC·Filed 2019·Granted Sep 12, 2023·0 cites·27 claims
- 1851US11495670B2Integrated epitaxial metal electrodesIQE PLC·Filed 2019·Granted Nov 8, 2022·0 cites·20 claims
- 1951US10573686B2Epitaxial AIN/cREO structure for RF filter applicationsIQE PLC·Filed 2017·Granted Feb 25, 2020·0 cites·15 claims
- 2050US10418457B2Metal electrode with tunable work functionsIQE PLC·Filed 2018·Granted Sep 17, 2019·0 cites·20 claims
- 2143US10923345B2Epitaxial metal oxide as buffer for epitaxial III-V layersIQE PLC·Filed 2017·Granted Feb 16, 2021·0 cites·15 claims
- 2243US2020388489A1Integrated epitaxial metal electrodes for modified devicesIQE PLC·Filed 2019·Application pending·0 cites
- 2338US2021257809A1Strain-balanced semiconductor structureIQE PLC·Filed 2021·Application pending·0 cites
- 2437US2019122885A1Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layersDARGIS RYTIS·Filed 2017·Application pending·0 cites
- 2533US11005231B2Strain-balanced semiconductor structureIQE PLC·Filed 2018·Granted May 11, 2021·0 cites·20 claims
- 2631US2017170283A1Iii-nitride structures grown on silicon substrates with increased compressive stressIQE PLC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →