Flash memory device with word lines of uniform width and method for manufacturing thereof

Abstract

A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating film on the semiconductor substrate; and forming a metal plug which penetrates through the interlayer insulating film and is coupled to the bit line in a region where the portion of the plurality of word lines was eliminated.

1 - 9 . (canceled) 
     
     
         10 . A semiconductor device comprising:
 a bit line formed in a semiconductor substrate;   a plurality of word lines, wherein the plurality of word lines is arranged at predetermined intervals on the semiconductor substrate and intersects with the bit line; and   a metal plug formed in a region where a portion of the plurality of word lines is eliminated so as to be coupled to the bit line.   
     
     
         11 . The semiconductor device of  claim 11 , further comprising an interlayer insulating film formed on the semiconductor substrate. 
     
     
         12 . The semiconductor device of  claim 11 , further comprising a first insulating layer that is formed on the bit line between first conductive layers. 
     
     
         13 . The semiconductor device of  claim 13 , further comprising second insulating layers formed among the plurality of word lines. 
     
     
         14 . The semiconductor device of  claim 11 , further comprising a charge storage layer formed on the semiconductor substrate.