Resin molded semiconductor device and manufacturing method thereof

Abstract

This invention is directed to provide a method of manufacturing a resin molded semiconductor device with high reliability by preventing a resin leakage portion from occurring due to burrs on a lead frame formed by punching. The method of manufacturing the resin molded semiconductor device according to the invention includes bonding a semiconductor die on an island in a lead frame, electrically connecting the semiconductor die with the lead frame, resin-molding the lead frame on which the semiconductor die is bonded, and applying prior to the resin-molding a compressive pressure that is higher than a clamping pressure applied in the resin-molding to a region of the lead frame being clamped by molds in the resin-molding of the lead frame.

1 - 3 . (canceled) 
     
     
         4 . A resin molded semiconductor device, comprising:
 a semiconductor die;   a lead; and   a resin package in which the semiconductor die and part of the lead are embedded,   wherein the lead comprises a dent portion which extends from inside the resin package to outside the resin package and is formed on a top side of the lead, the top side being the same side as the side of the lead on which the semiconductor die is disposed.   
     
     
         5 . The resin molded semiconductor device of  claim 4 , wherein a surface roughness of the dent portion is smaller than a surface roughness of the lead not having the dent portion. 
     
     
         6 . The resin molded semiconductor device of  claim 4 , wherein burrs of the dent portion is smaller than burrs of the lead not having the dent portion. 
     
     
         7 . The resin molded semiconductor device of  claim 4 , further comprising a wire that is bonded to the lead at a position of the lead that is closer to the semiconductor die than to the dent potion. 
     
     
         8 . The resin molded semiconductor device of  claim 4 , wherein the device is part of a single in-line package. 
     
     
         9 . The resin molded semiconductor device of  claim 4 , wherein the device is part of a quad flat package. 
     
     
         10 . The resin molded semiconductor device of  claim 4 , wherein the semiconductor die comprises a high electrical conductivity device. 
     
     
         11 . The resin molded semiconductor device of  claim 10 , wherein the high electrical conductivity device is a power device. 
     
     
         12 . The resin molded semiconductor device of  claim 4 , wherein a thickness of the lead is 0.2 to 0.5 mm. 
     
     
         13 . The resin molded semiconductor device of  claim 4 , wherein the semiconductor die comprises a medium electrical conductivity device. 
     
     
         14 . A resin molded semiconductor device, comprising:
 a lead comprising a first portion and a second portion; and   a resin package in which part of the lead is embedded,   wherein a surface roughness of the first portion is smaller than a surface roughness of the second portion.   
     
     
         15 . The resin molded semiconductor device of  claim 14 , wherein the first portion is a dent in the lead. 
     
     
         16 . The resin molded semiconductor device of  claim 14 , wherein burrs of the first portion is smaller than burrs of the second portion. 
     
     
         17 . The resin molded semiconductor device of  claim 14 , further comprising a wire that is bonded to the lead at a position of the lead that is closer to the semiconductor die than to the first potion. 
     
     
         18 . The resin molded semiconductor device of  claim 14 , wherein the device is part of a single in-line package. 
     
     
         19 . The resin molded semiconductor device of  claim 4 , wherein the device is part of a quad flat package. 
     
     
         20 . The resin molded semiconductor device of  claim 14 , wherein the semiconductor die comprises a high electrical conductivity device. 
     
     
         21 . The resin molded semiconductor device of  claim 20 , wherein the high electrical conductivity device is a power device. 
     
     
         22 . The resin molded semiconductor device of  claim 14 , wherein a thickness of the lead is 0.2 to 0.5 mm. 
     
     
         23 . The resin molded semiconductor device of  claim 14 , wherein the semiconductor die comprises a medium electrical conductivity device.