Selective wet etching of hafnium aluminum oxide films

Abstract

Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlO x ) material relative to silicon oxide (SiO x ) are provided.

1 . A semiconductor device structure, comprising:
 a dielectric material on a substrate;   a hafnium aluminum oxide material overlying and in contact with the dielectric material; and   a dielectric antireflective coating material overlying and in contact with the hafnium aluminum oxide material,   wherein the dielectric material, hafnium aluminum oxide material, and dielectric antireflective coating material comprises a plurality of openings therein, each of the plurality of openings comprising an aspect ratio of from about 1:1 to about 20:1.   
     
     
         2 . The semiconductor structure of  claim 1 , wherein the dielectric material has a thickness of from about 1,000 Å to 20,000 Å. 
     
     
         3 . The semiconductor structure of  claim 1 , wherein the hafnium aluminum oxide material has a thickness of from about 200 Å to 1,000 Å. 
     
     
         4 . The semiconductor structure of  claim 1 , wherein the dielectric antireflective coating material has a thickness of from about 200 Å to about 1,000 Å. 
     
     
         5 . The semiconductor structure of  claim 1 , further comprising a conductive material in the plurality of openings. 
     
     
         6 . The semiconductor structure of  claim 1 , wherein the dielectric material comprises silicon oxide material. 
     
     
         7 . The semiconductor structure of  claim 1 , further comprising a metal-insulator-metal-stack in the plurality of openings. 
     
     
         8 . A semiconductor structure, comprising:
 a silicon oxide material on a substrate;   a hafnium aluminum oxide material over the silicon oxide material;   a dielectric antireflective coating material over the hafnium aluminum oxide material; and   at least one opening extending through the silicon oxide material, hafnium aluminum oxide material, and dielectric antireflective coating material.   
     
     
         9 . The semiconductor structure of  claim 8 , wherein the hafnium aluminum oxide material has a Hf:Al ratio of about 20:1 to about 4:1. 
     
     
         10 . The semiconductor structure of  claim 8 , wherein the silicon oxide material comprises an oxide selected from the group consisting of tetraethylorthosilicate, spin-on-glass, undoped silicon dioxide, phosphosilicate glass, borophosphosilicate glass, and borosilicate glass. 
     
     
         11 . The semiconductor structure of  claim 8 , wherein the dielectric antireflective coating material comprises a silicon oxynitride of chemical formula Si x O y N z , wherein x is from 10 to 60, y is from 20 to 50, and z is from 10 to 20. 
     
     
         12 . A semiconductor structure, comprising:
 a dielectric material on a substrate;   a hafnium aluminum oxide material over the dielectric material; and   at least one opening extending through the dielectric material and hafnium aluminum oxide material.   
     
     
         13 . The semiconductor structure of  claim 12 , wherein the at least one opening comprises an aspect ratio of from about 1:1 to about 20:1. 
     
     
         14 . The semiconductor structure of  claim 12 , wherein the at least one opening has a width of from about 15 nm to 65 nm and a depth of from about 100 nm to 2,000 nm. 
     
     
         15 . The semiconductor structure of  claim 12 , further comprising an antireflective coating material over the hafnium aluminum oxide material, wherein the at least one opening extends through the dielectric material, hafnium aluminum oxide material, and dielectric antireflective coating material. 
     
     
         16 . The semiconductor structure of  claim 12 , wherein the dielectric material is a silicon oxide material consisting essentially of silicon and oxygen. 
     
     
         17 . The semiconductor structure of  claim 12 , wherein the dielectric antireflective coating material comprises a silicon oxynitride material.