Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same

Abstract

A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.

1 - 17 . (canceled) 
     
     
         18 . A thin-film capacitor article comprising:
 a first electrode;   a dielectric disposed upon the first electrode, wherein the dielectric exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof; and   a second electrode disposed upon the dielectric.   
     
     
         19 . The thin-film capacitor of  claim 18 , wherein the characteristic dimension is in a range from about 0.1 micrometer to about 1 micrometer. 
     
     
         20 . The thin-film capacitor of  claim 18 , wherein the TFC includes BST. 
     
     
         21 . The thin-film capacitor of  claim 18 , further including a socket coupled to the TFC. 
     
     
         22 . The thin-film capacitor of  claim 21 , further including:
 a die coupled to the TFC, wherein the die is disposed on the socket at a die side.   
     
     
         23 . The thin-film capacitor of  claim 21 , further including:
 a die coupled to the TFC; and   a board coupled to the socket, wherein the TFC is disposed between the board and the socket.   
     
     
         24 . A computing system comprising:
 a microelectronic die;   a TFC including:   a first electrode;   a dielectric disposed upon the first electrode, wherein the dielectric exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof; and   a second electrode disposed upon the dielectric; and   a dynamic random access memory coupled to the TFC.   
     
     
         25 . The computing system of  claim 24 , wherein the system is disposed in one of a computer, a wireless communicator, a hand-held device, an automobile, a locomotive, an aircraft, a watercraft, and a spacecraft. 
     
     
         26 . The computing system of  claim 24 , wherein the microelectronic die is selected from a data storage device, a digital signal processor, a micro controller, an application specific integrated circuit, and a microprocessor.