Electrolytic copper plating solution for filling for forming microwiring of copper for ulsi

Abstract

An electrolytic copper plating solution for filling for forming microwiring for ULSI, is characterized in that it has a pH of from 1.8 to 3.0. The electrolytic copper plating solution preferably contains a saturated carboxylic acid having from 1 to 4 carbon atoms at a concentration from 0.01 to 2.0 mol/L.

1 . A method for electrolytic copper plating for ULSI microwiring comprising the step of forming damascene microwiring for ULSI with an electrolytic copper plating aqueous solution for forming damascene microwiring for ULSI, characterized in that the plating solution has a pH of from 1.8 to 3.0, contains copper sulfate at 0.05 to 1.5 mol/L and chloride ions at a concentration of 0.3 to 3.0 mmol/L, and comprises a saturated carboxylic acid at a concentration of from 0.01 to 2.0 mol/L. 
     
     
         2 . The method of  claim 1 , wherein the plating aqueous solution has a pH of 2.0 to 2.2. 
     
     
         3 . The method of  claim 1 , wherein the saturated carboxylic acid contains from 1 to 4 carbon atoms. 
     
     
         4 . The method of  claim 3 , wherein the saturated carboxylic acid is acetic acid. 
     
     
         5 . A ULSI microwiring substrate in which the formation of voids on inner walls of vias/trenches has been suppressed, characterized in that USLI microwiring is formed by the method of  claim 1 .