Inventor · disambiguated record
Junnosuke Sekiguchi
Also filed as: SEKIGUCHI JUNNOSUKE
22 granted patents·6 pending applications·64 citations·filing 2002–2013
93Inventor score
Top patents by PatentIndex Score
28 records- 0191US7799188B2Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anodeNIPPON MINING CO·Filed 2009·Granted Sep 21, 2010·6 cites·6 claims
- 0285US7943033B2Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anodeJX NIPPON MINING & METALS CORP·Filed 2010·Granted May 17, 2011·2 cites·17 claims
- 0383US9034154B2Sputtering target and process for producing sameNAKAMURA YUICHIRO·Filed 2010·Granted May 19, 2015·3 cites·19 claims
- 0480US7968150B2Method of surface treatment using imidazole compoundNIPPON MINING CO·Filed 2008·Granted Jun 28, 2011·2 cites·2 claims
- 0579US7138040B2Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anodeNIPPON MINING CO·Filed 2002·Granted Nov 21, 2006·12 cites·14 claims
- 0678US7045461B2Metal plating method, pretreatment agent, and semiconductor wafer and semiconductor device obtained using theseNIKKON MATERIALS CO LTD·Filed 2004·Granted May 16, 2006·20 cites·11 claims
- 0774US8734579B2Aqueous solution containing divalent iron ionsMURAKAMI MASAOMI·Filed 2010·Granted May 27, 2014·2 cites·8 claims
- 0869US7648621B2Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesionNIPPON MINING CO·Filed 2002·Granted Jan 19, 2010·4 cites·9 claims
- 0969US7179741B2Electroless plating method and semiconductor wafer on which metal plating layer is formedNIKKO MATERIALS CO LTD·Filed 2003·Granted Feb 20, 2007·9 cites·16 claims
- 1061US8283051B2Plated product having copper thin film formed thereon by electroless platingITO JUNICHI·Filed 2009·Granted Oct 9, 2012·1 cites·5 claims
- 1160US8089154B2Electronic component formed with barrier-seed layer on base materialSEKIGUCHI JUNNOSUKE·Filed 2009·Granted Jan 3, 2012·1 cites·5 claims
- 1255US8004082B2Electronic component formed with barrier-seed layer on base materialNIPPON MINING CO·Filed 2009·Granted Aug 23, 2011·0 cites·5 claims
- 1350US8390123B2ULSI micro-interconnect member having ruthenium electroplating layer on barrier layerSEKIGUCHI JUNNOSUKE·Filed 2009·Granted Mar 5, 2013·0 cites·11 claims
- 1449US8736057B2Substrate and manufacturing method thereforITO JUNICHI·Filed 2008·Granted May 27, 2014·0 cites·8 claims
- 1549US8247301B2Substrate and manufacturing method thereforITO JUNICHI·Filed 2008·Granted Aug 21, 2012·0 cites·9 claims
- 1649US8182873B2Method for electroless plating and metal-plated articleIMORI TORU·Filed 2004·Granted May 22, 2012·2 cites·14 claims
- 1749US2014158546A1Electrolytic copper plating solution for filling for forming microwiring of copper for ulsiSEKIGUCHI JUNNOSUKE·Filed 2013·Application pending·0 cites
- 1847US8333834B2High-purity aqueous copper sulfonate solution and method of producing sameSEKIGUCHI JUNNOSUKE·Filed 2011·Granted Dec 18, 2012·0 cites·5 claims
- 1946US9234292B2Nickel-iron alloy plating solutionMURAKAMI MASAOMI·Filed 2010·Granted Jan 12, 2016·0 cites·2 claims
- 2045US8394508B2Plated article having metal thin film formed by electroless platingYABE ATSUSHI·Filed 2008·Granted Mar 12, 2013·0 cites·10 claims
- 2145US8163400B2Plated article having metal thin film formed by electroless plating, and manufacturing method thereofYABE ATSUSHI·Filed 2008·Granted Apr 24, 2012·0 cites·22 claims
- 2245US2006135584A1Novel imidazole alcohol compound, process for producing the same, and surface-treating agent comprising the sameIMORI TORU·Filed 2003·Application pending·0 cites
- 2344US2008224313A1Method for forming a seed layer for damascene copper wiring, and semiconductor wafer with damascene copper wiring formed using the methodYABE ATSUSHI·Filed 2008·Application pending·0 cites
- 2442US8395264B2Substrate comprising alloy film of metal element having barrier function and metal element having catalytic powerITO JUNICHI·Filed 2010·Granted Mar 12, 2013·0 cites·10 claims
- 2542US2012103820A1Electrolytic copper plating solution for filling for forming microwiring of copper for ulsiSEKIGUCHI JUNNOSUKE·Filed 2010·Application pending·0 cites
- 2641US8404035B2Electroless copper plating solutionYABE ATSUSHI·Filed 2004·Granted Mar 26, 2013·0 cites·1 claims
- 2738US2013139648A1Recovery Method for High Purity PlatinumSEKIGUCHI JUNNOSUKE·Filed 2011·Application pending·0 cites
- 2834US2007071904A1Electroless copper plating solution and electroless copper plating methodYABE ATSUSHI·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →