US2014174358A1PendingUtilityA1

Magnetic Field Assisted Deposition

67
Assignee: VEECO ALD INCPriority: Mar 31, 2011Filed: Feb 28, 2014Published: Jun 26, 2014
Est. expiryMar 31, 2031(~4.7 yrs left)· nominal 20-yr term from priority
Inventors:Sang In Lee
C23C 16/45517C23C 16/45544C23C 16/448C23C 16/50C23C 16/44
67
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Claims

Abstract

Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An apparatus for depositing a layer on a substrate, comprising:
 a process chamber;   a reactor at least partially enclosed in a process chamber, the reactor comprising electrodes for generating radicals as precursor molecules, the reactor formed with a reaction chamber in which the precursor molecules travel to a surface of the substrate;   a plurality of magnets within the processor chamber and attached to the reactor, the plurality of magnets configured to generate a magnetic field within the reaction chamber, the magnetic field traversing paths of the precursor molecules to the substrate to cause spiral movements of the precursor molecules relative to a surface of the substrate; and   a mechanism coupled to the substrate of the body to cause relative motion between the body and the substrate.   
     
     
         2 . The apparatus of  claim 1 , wherein the reactor is further formed with a channel for supplying the precursor molecules to the reaction chamber, a constriction zone connected to the reaction chamber and having a height lower than the reaction chamber, and an exhaust portion connected to the constriction zone and configured to discharge excess precursor molecules from the apparatus. 
     
     
         3 . The apparatus of  claim 1 , wherein at least one of the magnets form a wall of the reaction chamber. 
     
     
         4 . The apparatus of  claim 1 , wherein at least one of the magnets are placed outside the body. 
     
     
         5 . The apparatus of  claim 1 , wherein the reactor is formed of non-magnetic material. 
     
     
         6 . The apparatus of  claim 1 , wherein one of the plurality of magnet is placed at one side of the reaction chamber and another of the plurality of magnet is placed at an opposite side of the reaction chamber. 
     
     
         7 . The apparatus of  claim 1 , wherein the reactor is formed with a plasma chamber along which the electrodes extending, and wherein plasma is generated within the plasma chamber by applying voltage across the electrodes. 
     
     
         8 . The apparatus of  claim 7 , wherein the reactor is further formed with a channel for supplying gas into the plasma chamber, perforations between the reactor chamber and the plasma chamber, a constriction zone connected to the reaction chamber and having a height lower than the reaction chamber, and an exhaust portion connected to the constriction zone and configured to discharge excess precursor molecules from the apparatus. 
     
     
         9 . The apparatus of  claim 1 , wherein the plurality of magnets are permanent magnets or electromagnets.

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