Device and method for processing strip-type substrates

Abstract

The invention relates first to a device for processing a strip-type substrate ( 1 ), in particular by coating, in a processing chamber ( 2 ), using a processing roller ( 3 ) mounted to rotate about an axis of rotation ( 18 ) in the processing chamber ( 2 ), such that the substrate ( 1 ), which is unwound from a first coil ( 6 ) with which it is in contact in a helical pattern is processed continuously, wherein the processed, in particular coated, substrate ( 1 ) is wound onto a second coil ( 7 ), wherein a gas inlet/outlet device ( 8, 9, 10 ) is provided for generating a gas stream ( 11, 12 ) directed essentially in parallel to the axis of rotation ( 18 ). In addition, the invention relates to a method for coating a strip-type substrate ( 1 ) in a device.

1 . A device for processing a strip-type substrate ( 1 ), in particular by coating, in a processing chamber ( 2 ), using a processing roller ( 3 ) mounted to rotate about an axis of rotation ( 18 ) in the processing chamber ( 2 ), such that the substrate ( 1 ), which is unwound from a first coil ( 6 ) with which it is in contact in a helical pattern, is processed continuously, wherein the processed, in particular coated, substrate ( 1 ) is wound onto a second coil ( 7 ), wherein a gas inlet/outlet device ( 8 ,  9 ,  10 ) is provided for generating a gas stream ( 11 ,  12 ) directed essentially in parallel to the axis of rotation ( 18 ), forming a gas flow field extending around the entire circumference of the processing roller. 
     
     
         2 . The device according to  claim 1 , characterized in that the gas inlet/outlet device ( 8 ,  9 ,  10 ) has a gas inlet element ( 8 ,  9 ). 
     
     
         3 . The device according to  claim 2 , characterized in that the gas inlet/outlet device ( 8 ,  9 ,  10 ) has a gas inlet element ( 10 ). 
     
     
         4 . The device according to  claim 2 , characterized in that the gas inlet element ( 8 ,  9 ) is designed in a ring shape. 
     
     
         5 . The device according to  claim 4 , characterized in that the gas outlet element ( 10 ) is designed in a ring shape. 
     
     
         6 . The device according to  claim 5 , characterized by a purification zone ( 4 ) and a deposition zone ( 5 ) arranged at an offset therefrom in the direction of the axis of rotation ( 18 ). 
     
     
         7 . The device according to  claim 4 , characterized in that the ring-shaped gas inlet element ( 8 ,  9 ) has openings ( 13 ) opening in the direction of the axis of rotation ( 18 ). 
     
     
         8 . The device according to  claim 7 , characterized in that the ring-shaped gas outlet element ( 10 ) has openings ( 13 ) opening in the direction of the axis of rotation ( 18 ). 
     
     
         9 . The device according to  claim 1 , characterized by a gas outlet element ( 10 ) surrounding the processing roller ( 3 ) in a ring shape approximately at its axial center for accommodating a purifying gas and/or a process which is introduced in the process chamber from a gas inlet element ( 8 ,  9 ) surrounding the processing roller ( 3 ) in the form of a ring. 
     
     
         10 . The device according to  claim 1 , characterized in that the processing roller ( 3 ) is heatable so that its surface temperature can be brought to a process temperature (T 2 ) which is above room temperature (T 1 ), wherein it is provided in particular that a heater arranged within the processing zone ( 3 ) generates an axial temperature profile with a maximum temperature at the center of the roller. 
     
     
         11 . The device according to  claim 1 , characterized in that the diameter of the processing roller ( 3 ) is greatest at its axial center, and the roller has in particular a lateral surface running along a rotational paraboloid. 
     
     
         12 . A method for coating a strip-type substrate ( 1 ) in a device according to one of the preceding claims, characterized in that the coating is a graphene film or a film of nanotubes. 
     
     
         13 . The method according to  claim 12 , characterized in that the process gas is carbon-based and is in particular CH 4 , C 2 H 4 , C 2 H 2,  C 6 H 6 . 
     
     
         14 . The method according to  claim 13 , characterized in that the purifying gas is H 2 , Ar, NH 3 . 
     
     
         15 . The device or method, characterized by the characterizing features of one of the preceding claims.