Method for fabricating an esd protection device

Abstract

A method for fabricating an ESD protection device . Agate electrode of a core device is formed in a non I/O region and a gate electrode of an ESD protection device is formed in a I/O region. A first photoresist film masks the I/O region and reveals the non I/O region. The first photoresist film includes at least an opening adjacent to the gate electrode of the ESD protection device in the I/O region. A core pocket implantation process using the first photoresist film as an implant mask is performed to implant dopants of a second conductivity type into the I/O region through the opening and into the non I/O region, thereby forming a core pocket doping region in the I/O region and core pocket doping regions in the non I/O region.

What is claimed is: 
     
         1 . A method for fabricating an ESD protection device, comprising:
 providing a substrate with an input/output (I/O) region and a non I/O region;   forming a gate electrode of a core device overlying the substrate in the non I/O region and a gate electrode of an ESD protection device overlying the substrate in the I/O region;   forming a first photoresist film on the substrate, wherein the first photoresist film masks the I/O region while reveals the non I/O region, and wherein the first photoresist film comprises at least an opening positioned adjacent to, immediately or not, the gate electrode of the ESD protection device in the I/O region; and   using the first photoresist film as an implant mask, performing a core pocket implantation process to implant dopants of a second conductivity type into the I/O region through the opening and into the non I/O region, thereby forming a core pocket doping region in the I/O region, and core pocket doping regions in the non I/O region.   
     
     
         2 . The method for fabricating an ESD protection device according to  claim 1 , further comprising:
 forming spacers on sidewalls of the gate electrodes.   
     
     
         3 . The method for fabricating an ESD protection device according to  claim 1 , further comprising:
 forming a second photoresist film on the substrate, wherein the second photoresist film masks the I/O region while reveals the non I/O region; and   performing a first source/drain implantation process to implant dopants of the first conductivity type into the non I/O region, thereby forming a source region and a drain region of the core device.   
     
     
         4 . The method for fabricating an ESD protection device according to  claim 1 , further comprising:
 forming a third photoresist film on the substrate, wherein the third photoresist film masks the non I/O region while reveals the I/O region; and   performing a second source/drain implantation process to implant dopants of the first conductivity type into the I/O region, thereby forming a source region and a drain region of the ESD protection device.