US2014213064A1PendingUtilityA1

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Assignee: TOSHIBA KKPriority: Jan 25, 2013Filed: Jul 29, 2013Published: Jul 31, 2014
Est. expiryJan 25, 2033(~6.5 yrs left)· nominal 20-yr term from priority
H10P 50/695H10P 70/27H10P 70/23H10P 70/20H10P 72/0408H10B 41/30H01L 21/02104H01L 21/67017
52
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Claims

Abstract

A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.

Claims

exact text as granted — not AI-modified
1 . A semiconductor manufacturing apparatus comprising:
 a chamber;   a chemical-agent supply part supplying a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber; and   a spray part spraying a water-capture agent capturing water into an atmosphere in the chamber.   
     
     
         2 . The apparatus of  claim 1 , wherein the water-capture agent is made of a material same as a material of the water-repellent agent. 
     
     
         3 . The apparatus of  claim 1 , wherein the water-repellent agent is a silane coupling agent, and the organic solvent is isopropyl alcohol. 
     
     
         4 . The apparatus of  claim 2 , wherein the water-repellent agent is a silane coupling agent, and the organic solvent is isopropyl alcohol. 
     
     
         5 . The apparatus of  claim 1 , wherein the spray part sprays the water-capture agent into the atmosphere in the chamber either simultaneously with or before a timing at which the chemical-liquid supply part supplies the water-repellent agent or the organic solvent to the surface of the semiconductor substrate. 
     
     
         6 . The apparatus of  claim 1 , wherein the chemical-agent supply part sprays the organic solvent to the surface of the semiconductor substrate. 
     
     
         7 . The apparatus of  claim 1 , wherein
 the chamber accommodates a plurality of the semiconductor substrates, and   the chemical-agent supply part sprays the organic solvent to surfaces of the semiconductor substrates.   
     
     
         8 . The apparatus of  claim 1 , wherein the spray part is formed integrally with the chemical-agent supply part. 
     
     
         9 . The apparatus of  claim 1 , further comprising a mounting part mounting the semiconductor substrate in the chamber, wherein
 the mounting part rotates the semiconductor substrate in order to drain off a liquid on the semiconductor substrate.   
     
     
         10 . The apparatus of  claim 1 , comprising a vacuum device evacuating air from interior of the chamber. 
     
     
         11 . A manufacturing method of a semiconductor device for manufacturing the semiconductor device using a semiconductor manufacturing apparatus, which comprises a chamber, a chemical-agent supply part supplying a water-repellent agent or an organic solvent into the chamber, and a spray part spraying a water-capture agent capturing water into the chamber, the method comprising:
 arranging a semiconductor substrate having been cleaned with a cleaning liquid in the chamber;   spraying the water-capture agent capturing water into an atmosphere in the chamber; and   supplying the water-repellent agent or the organic solvent to a surface of the semiconductor substrate either simultaneously with or after spraying of the water-capture agent.   
     
     
         12 . The method of  claim 11 , wherein the water-capture agent is a chemical liquid same as the water-repellent agent. 
     
     
         13 . The method of  claim 11 , wherein the water-repellent agent is a silane coupling agent, and the organic solvent is isopropyl alcohol. 
     
     
         14 . The method of  claim 12 , wherein the water-repellent agent is a silane coupling agent, and the organic solvent is isopropyl alcohol. 
     
     
         15 . The method of  claim 11 , further comprising rinsing the surface of the semiconductor substrate with deionized water after supplying the water-repellent agent. 
     
     
         16 . The method of  claim 11 , further comprising rotating the semiconductor substrate in order to drain off a liquid on the semiconductor substrate after supplying the water-repellent agent or the organic solvent. 
     
     
         17 . The method of  claim 11 , wherein supply of the organic solvent is performed by allowing the chemical-agent supply part to spray the water-repellent agent or the organic solvent to the surface of the semiconductor substrate. 
     
     
         18 . The method of  claim 11 , wherein
 the chamber accommodates a plurality of the semiconductor substrates, and   the chemical-agent supply part sprays the organic solvent to surfaces of the semiconductor substrates.   
     
     
         19 . The method of  claim 15 , wherein
 the chamber accommodates a plurality of the semiconductor substrates, and   the chemical-agent supply part sprays the organic solvent to surfaces of the semiconductor substrates.

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