Vapor deposition reactor and method for forming thin film

Abstract

A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

What is claimed is: 
     
         1 . A method for forming a thin film, comprising:
 filling a first material in a first recess formed in a first portion of a vapor deposition reactor to a first pressure by providing the first material via at least one injection portion;   receiving the first material in a second recess formed in a second portion of the vapor deposition reactor via the first recess, the second portion located adjacent to the first portion, the second recess having a height not greater than ⅔ of a width of the first recess;   discharging the first material via a third recess communicatively connected to the second recess; and   moving a portion of a substrate below the first recess, the second recess and the third recess.   
     
     
         2 . The method of  claim 1 , wherein the first material comprises one or more selected from the group consisting of a source precursor, a reactant precursor and an inert gas. 
     
     
         3 . The method of  claim 2 , wherein the source precursor comprises an inorganic compound and/or an organic compound. 
     
     
         4 . The method of  claim 2 , wherein the reactant precursor comprises one or more selected from the group consisting of H 2 O, H 2 O 2 , O 2 , N 2 O, NO, O 3 , O* radical, NH 3 , NH 2 —NH 2 , N* radical, CO, CO 2 , CH 4 , C 2 H 6 , H 2  and H* radical. 
     
     
         5 . The method of  claim 2 , wherein the inert gas comprises one or more selected from the group consisting of N 2 , Ar and He. 
     
     
         6 . The method of  claim 1 , further comprising:
 filling a second material in a fourth recess of the vapor deposition reactor;   receiving the second material in a fifth recess of the vapor deposition reactor via the fourth recess;   receiving the second material in a sixth recess of the vapor deposition reactor via the fifth recess; and   moving the portion of the substrate below the fourth recess, the fifth recess and the sixth recess.   
     
     
         7 . The method of  claim 6 , wherein the second material comprises one or more selected from the group consisting of a source precursor, a reactant precursor and an inert gas. 
     
     
         8 . The method of  claim 7 , wherein the source precursor comprises an inorganic compound and/or an organic compound. 
     
     
         9 . The method of  claim 7 , wherein the reactant precursor comprises one or more selected from the group consisting of H 2 O, H 2 O 2 , O 2 , N 2 O, NO, O 3 , O* radical, NH 3 , NH 2 —NH 2 , N* radical, CO, CO 2 , CH 4 , C 2 H 6 , H 2  and H* radical. 
     
     
         10 . The method of  claim 7 , wherein the inert gas comprises one or more selected from the group consisting of N 2 , Ar and He. 
     
     
         11 . The method of  claim 6 , wherein the portion of the substrate moves below fourth recess, the fifth recess and the sixth recess after moving below the first recess, the second recess and the third recess. 
     
     
         12 . The method of  claim 6 , wherein atomic layer deposition is performed on the portion of the substrate by moving the portion of the substrate below the first recess, the second recess, the third recess, the fourth recess, the fifth recess and the sixth recess. 
     
     
         13 . The method of  claim 1 , wherein the height of the second recess is not greater than ⅓ of the width of the first recess. 
     
     
         14 . The method  claim 1 , wherein a distance between the substrate to the vapor deposition reactor is 0.5 mm to 3 mm. 
     
     
         15 . A substrate deposited with a thin film, the thin film deposited on the substrate by a process comprising:
 filling a first material in a first recess formed in a first portion of a vapor deposition reactor to a first pressure by providing the first material via at least one injection portion;   receiving the first material in a second recess formed in a second portion of the vapor deposition reactor via the first recess, the second portion located adjacent to the first portion, the second recess having a height not greater than ⅔ of a widths of the first recess;   discharging the first material via a third recess communicatively connected to the second recess; and   moving a portion of a substrate below the first recess, the second recess and the third recess.   
     
     
         16 . The substrate of  claim 15 , wherein the first material comprises one or more selected from the group consisting of a source precursor, a reactant precursor and an inert gas. 
     
     
         17 . The substrate of  claim 16 , wherein the source precursor comprises an inorganic compound and/or an organic compound. 
     
     
         18 . The substrate of  claim 16 , wherein the reactant precursor comprises one or more selected from the group consisting of H 2 O, H 2 O 2 , O 2 , N 2 O, NO, O 3 , O* radical, NH 3 , NH 2 —NH 2 , N* radical, CO, CO 2 , CH 4 , C 2 H 6 , H 2  and H* radical. 
     
     
         19 . The substrate of  claim 16 , wherein the inert gas comprises one or more selected from the group consisting of N 2 , Ar and He. 
     
     
         20 . The substrate of  claim 15 , wherein the process further comprises:
 filling a second material in a fourth recess of the vapor deposition reactor;   receiving the second material in a fifth recess of the vapor deposition reactor via the fourth recess;   receiving the second material in a sixth recess of the vapor deposition reactor via the fifth recess; and   moving the portion of the substrate below the fourth recess, the fifth recess and the sixth recess.