Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing system

Abstract

A semiconductor device is provided which includes: semiconductor pillars which include impurity diffused layers, each semiconductor pillar having a width which allows full depletion of a semiconductor forming each semiconductor pillar, the impurity diffused layers being electrically connected to each other; and a common gate section which covers side faces of the pillars.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 semiconductor pillars, each of which has a width which allows full depletion of a semiconductor forming each semiconductor pillar;   a common gate section including gate electrodes which cover side faces of the pillars;   first impurity diffused layers provided at first end portions of the pillars;   second impurity diffused layers provided at second end portions of the pillars; and   third impurity diffused layers connected to the second impurity diffused layers, the third impurity diffused layers being surrounded by, and penetrated through, the gate electrodes.   
     
     
         2 . The semiconductor device as recited in  claim 1 , further comprising
 an oxide film provided around the first end portions of the pillars, the oxide film being formed by oxidation.