Inventor · disambiguated record
Yoshihiro Takaishi
Also filed as: TAKAISHI YOSHIHIRO
50 granted patents·14 pending applications·1,159 citations·filing 1994–2015
98Inventor score
Top patents by PatentIndex Score
64 records- 0198US5726083AProcess of fabricating dynamic random access memory device having storage capacitor low in contact resistance and small in leakage current through tantalum oxide filmNEC CORP·Filed 1995·Granted Mar 10, 1998·369 cites·10 claims
- 0297US5604696AStacked capacitor type semiconductor memory device with good flatness characteristicsNEC CORP·Filed 1995·Granted Feb 18, 1997·195 cites·19 claims
- 0394US8378417B2Semiconductor device including a well potential supply device and a vertical MOS transistorELPIDA MEMORY INC·Filed 2010·Granted Feb 19, 2013·20 cites·20 claims
- 0493US8154076B2High and low voltage vertical channel transistorsTAKAISHI YOSHIHIRO·Filed 2008·Granted Apr 10, 2012·29 cites·8 claims
- 0592US5798544ASemiconductor memory device having trench isolation regions and bit lines formed thereoverNEC CORP·Filed 1994·Granted Aug 25, 1998·105 cites·8 claims
- 0691US6063669AManufacturing method of semiconductor memory device having a trench gate electrodeNEC CORP·Filed 1997·Granted May 16, 2000·72 cites·13 claims
- 0789US7872301B2Semiconductor device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2008·Granted Jan 18, 2011·16 cites·16 claims
- 0889US7534695B2Method of manufacturing a semiconductor deviceELPIDA MEMORY INC·Filed 2007·Granted May 19, 2009·18 cites·5 claims
- 0988US8372724B2Device and manufacturing method thereofELPIDA MEMORY INC·Filed 2010·Granted Feb 12, 2013·10 cites·19 claims
- 1088US6914336B2Semiconductor device structure and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2001·Granted Jul 5, 2005·55 cites·18 claims
- 1187US8987796B2Semiconductor device having semiconductor pillarELPIDA MEMORY INC·Filed 2013·Granted Mar 24, 2015·6 cites·19 claims
- 1287US5689126ASemiconductor memory device having stacked capacitorNEC CORP·Filed 1995·Granted Nov 18, 1997·61 cites·10 claims
- 1385US8779492B2Semiconductor device and method of forming the sameTAKAISHI YOSHIHIRO·Filed 2011·Granted Jul 15, 2014·8 cites·6 claims
- 1483US8415741B2High voltage vertical channel transistorsTAKAISHI YOSHIHIRO·Filed 2011·Granted Apr 9, 2013·6 cites·16 claims
- 1583US7842999B2Semiconductor memory device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2008·Granted Nov 30, 2010·8 cites·18 claims
- 1681US9543246B2Semiconductor devicePS4 LUXCO SARL·Filed 2014·Granted Jan 10, 2017·5 cites·14 claims
- 1781US7655969B2Semiconductor device having a cylindrical capacitorELPIDA MEMORY INC·Filed 2006·Granted Feb 2, 2010·9 cites·13 claims
- 1878US5801079AMethod for manufacturing a stacked capacitor type semiconductor memory device with good flatness characteristicsNEC CORP·Filed 1995·Granted Sep 1, 1998·38 cites·9 claims
- 1975US9178056B2Semiconductor devicePS4 LUXCO SARL·Filed 2012·Granted Nov 3, 2015·3 cites·19 claims
- 2073US9129837B2Semiconductor deviceMICRON TECHNOLOGY INC·Filed 2014·Granted Sep 8, 2015·3 cites·14 claims
- 2173US8278694B2Semiconductor device with vertical transistorIKEBUCHI YOSHINORI·Filed 2011·Granted Oct 2, 2012·4 cites·16 claims
- 2271US9136227B2Semiconductor device with buried bit lineTAKAISHI YOSHIHIRO·Filed 2011·Granted Sep 15, 2015·3 cites·16 claims
- 2371US8735970B2Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing systemTAKAISHI YOSHIHIRO·Filed 2008·Granted May 27, 2014·4 cites·20 claims
- 2470US7538377B2Semiconductor memory deviceELPIDA MEMORY INC·Filed 2006·Granted May 26, 2009·4 cites·7 claims
- 2569US8357577B2Manufacturing method of semiconductor device having vertical type transistorELPIDA MEMORY INC·Filed 2011·Granted Jan 22, 2013·3 cites·10 claims
- 2667US7910986B2Semiconductor memory device and data processing systemELPIDA MEMORY INC·Filed 2008·Granted Mar 22, 2011·3 cites·14 claims
- 2766US7645653B2Method for manufacturing a semiconductor device having a polymetal gate electrode structureELPIDA MEMORY INC·Filed 2007·Granted Jan 12, 2010·3 cites·13 claims
- 2865US8569830B2Semiconductor device having vertical MOS transistor and method for manufacturing the semiconductor deviceOYU KIYONORI·Filed 2008·Granted Oct 29, 2013·3 cites·21 claims
- 2964US9570447B2Semiconductor device and production method thereforPS4 LUXCO SARL·Filed 2014·Granted Feb 14, 2017·1 cites·7 claims
- 3062US8890241B2Semiconductor deviceELPIDA MEMORY INC·Filed 2013·Granted Nov 18, 2014·1 cites·20 claims
- 3161US8969975B2Semiconductor device having semiconductor pillarELPIDA MEMORY INC·Filed 2013·Granted Mar 3, 2015·1 cites·6 claims
- 3257US7879702B2Method for manufacturing a semiconductor device including a memory cell array area and peripheral circuit areaELPIDA MEMORY INC·Filed 2007·Granted Feb 1, 2011·1 cites·6 claims
- 3355US5698467AMethod of manufacturing an insulation layer having a flat surfaceNEC CORP·Filed 1996·Granted Dec 16, 1997·20 cites·7 claims
- 3454US7808052B2Semiconductor device and method of forming the sameELPIDA MEMORY INC·Filed 2009·Granted Oct 5, 2010·0 cites·6 claims
- 3552US9379233B2Semiconductor devicePS4 LUXCO SARL·Filed 2015·Granted Jun 28, 2016·0 cites·4 claims
- 3650US2014239384A1Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing systemTAKAISHI YOSHIHIRO·Filed 2014·Application pending·0 cites
- 3749US7947550B2Method of forming semiconductor deviceELPIDA MEMORY INC·Filed 2010·Granted May 24, 2011·0 cites·14 claims
- 3848US6143600AMethod of fabricating a semiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned mannerNEC CORP·Filed 1997·Granted Nov 7, 2000·8 cites·5 claims
- 3948US6040215AMethod of manufacturing semiconductor device including memory cell having transistorNEC CORP·Filed 1997·Granted Mar 21, 2000·9 cites·16 claims
- 4047US6174768B1Dynamic random access memory cell having an improved fin-structured storage electrode and method of fabricating the sameNEC CORP·Filed 1998·Granted Jan 16, 2001·9 cites·10 claims
- 4146US2014038375A1Semiconductor device having vertical mos transistor and method for manufacturing the semiconductor deviceELPIDA MEMORY INC·Filed 2013·Application pending·0 cites
- 4245US7674676B2Semiconductor device manufacturing method for forming diffused layers by impurity implantation using gate wiring layer maskELPIDA MEMORY INC·Filed 2008·Granted Mar 9, 2010·0 cites·20 claims
- 4344US7528454B2Semiconductor memory with sense amplifierELPIDA MEMORY INC·Filed 2006·Granted May 5, 2009·0 cites·12 claims
- 4444US5903430ADynamic random access memory cell having an improved fin-structured storage electrodeNEC CORP·Filed 1997·Granted May 11, 1999·7 cites·8 claims
- 4544US2008308854A1Semiconductor memory device and fabrication method thereofELPIDA MEMORY INC·Filed 2008·Application pending·0 cites
- 4644US2009072291A1Semiconductor memory deviceELPIDA MEMORY INC·Filed 2008·Application pending·0 cites
- 4743US5973343ASemiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned manner and process of fabrication thereofNEC CORP·Filed 1996·Granted Oct 26, 1999·6 cites·17 claims
- 4843US5913150AMethod for manufacturing semiconductor device using spin on glass layerNEC CORP·Filed 1997·Granted Jun 15, 1999·8 cites·8 claims
- 4943US2010078712A1Semiconductor device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2009·Application pending·0 cites
- 5043US2008296677A1Semiconductor device and method of manufacturing the same and data processing systemELPIDA MEMORY INC·Filed 2008·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →