US2014283992A1PendingUtilityA1

Substrate processing apparatus

Assignee: MITSUBISHI GAS CHEMICAL COPriority: Mar 4, 2011Filed: Jun 9, 2014Published: Sep 25, 2014
Est. expiryMar 4, 2031(~4.5 yrs left)· nominal 20-yr term from priority
H10P 72/0604H10P 72/0454H10P 72/0424H10P 72/0414H10P 72/0406H10P 72/0422H10P 50/00H01L 21/67075
51
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a first processing chamber and a second processing chamber;   a first substrate holding unit that holds a substrate in the first processing chamber;   a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit;   a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate; and   a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.   
     
     
         2 . The substrate processing apparatus according to  claim 1 , further comprising:
 a third processing chamber;   a third substrate holding unit that holds a substrate in the third processing chamber; and   a rinsing liquid supply unit that supplies a rinsing liquid to the substrate held by the third substrate holding unit,   wherein the substrate transfer unit transfers the substrate from the second processing chamber to the third processing chamber.   
     
     
         3 . The substrate processing apparatus according to  claim 1 , wherein the chemical solution supply unit partially supplies the chemical solution to a major surface of the substrate held by the first substrate holding unit. 
     
     
         4 . The substrate processing apparatus according to  claim 3 , further comprising a foreign-matter measuring unit that measures a position of foreign matters adhering to the major surface of the substrate,
 wherein the chemical solution supply unit supplies the chemical solution into a region in which the foreign matters are contained in the major surface.   
     
     
         5 . The substrate processing apparatus according to  claim 4 , further comprising a measuring chamber in which the position of the foreign matters adhering to the substrate is measured by the foreign-matter measuring unit,
 wherein the substrate transfer unit transfers the substrate from the measuring chamber to the first processing chamber.   
     
     
         6 . The substrate processing apparatus according to  claim 3 , wherein the chemical solution supply unit supplies the chemical solution into a predetermined region of the major surface.

Join the waitlist — get patent alerts

Track US2014283992A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.