Copper electroplating apparatus

Abstract

A copper electroplating apparatus is disclosed. The copper electroplating apparatus includes: a plating bath configured to hold a plating solution therein; a soluble anode of phosphorus-containing copper; a substrate holder configured to hold a substrate; an anode bag that surrounds the anode, the anode bag being formed of mesh; a regulation plate configured to regulate an electric field, the regulation plate having an opening and being disposed between the anode and the substrate held by the substrate holder; and a diaphragm disposed so as to dose the opening of the regulation plate, the diaphragm being configured to allow permeation of metal ions therethrough and not allow permeation of additives contained in the plating solution.

What is claimed is: 
     
         1 . A copper electroplating apparatus comprising:
 a plating bath configured to hold a plating solution therein;   a soluble anode of phosphorus-containing copper to be immersed in the plating solution held in the plating bath;   a substrate holder configured to hold a substrate and dispose the substrate at a position opposite the anode while immersing the substrate in the plating solution held in the plating bath;   a substrate holder transport device configured to transport the substrate holder holding the substrate;   an anode bag that surrounds the anode, the anode bag being formed of mesh;   a regulation plate configured to regulate an electric field, the regulation plate having an opening and being disposed between the anode and the substrate held by the substrate holder; and   a diaphragm disposed so as to close the opening of the regulation plate, the diaphragm being configured to allow permeation of metal ions therethrough and not allow permeation of additives contained in the plating solution.   
     
     
         2 . The copper electroplating apparatus according to  claim 1 , wherein the anode of phosphorus-containing copper has a phosphorus concentration in a range of 1800 to 2700 ppm by mass and an average copper grain size in a range of 15 μm to 45 μm. 
     
     
         3 . The copper electroplating apparatus according to  claim 2 , wherein the average copper grain size is in a range of 30 μm to 40 μm. 
     
     
         4 . The copper electroplating apparatus according to  claim 1 , further comprising:
 a shield box which separates as interior of the plating bath into an anode chamber in which the anode is disposed and a cathode chamber in which the substrate, held by the substrate holder, is disposed,   wherein the anode bag and the diaphragm are disposed in the anode chamber, and   the shield box has an opening, which is closed with the diaphragm, at a position opposite the opening of the regulation plate.   
     
     
         5 . The copper electroplating apparatus according to  claim 4 , further comprising:
 a bubbling device configured to form bubbles in the plating solution held in the anode chamber.   
     
     
         6 . The copper electroplating apparatus according to  claim 1 , wherein the diaphragm is formed of a cation exchange membrane or a porous membrane. 
     
     
         7 . A copper electroplating apparatus comprising:
 a plating bath configured to hold a plating solution therein;   a soluble anode of phosphorus-containing copper to be immersed in a plating solution held in the plating bath;   a substrate holder configured to hold a substrate and dispose the substrate at a position opposite the anode while immersing the substrate in the plating solution held in the plating bath;   a substrate holder transport device configured to transport the substrate holder holding the substrate;   a first anode bag that surrounds the anode, the first anode bag being formed of mesh;   a second anode bag that surrounds the first anode bag, the second anode bag being formed of mesh which is finer than the first anode bag; and   a regulation plate configured to regulate an electric field, the regulation plate having an opening and being disposed between the anode and the substrate held by the substrate holder.   
     
     
         8 . The copper electroplating apparatus according to  claim 7 , further comprising:
 a shield box which separates an interior of the plating bath into an anode chamber in which the anode is disposed and a cathode chamber in which the substrate, held by the substrate holder, is disposed,   wherein the first anode bag and the second anode bag are disposed in the anode chamber, and   the shield box has an opening, which is closed with a diaphragm, at a position opposite the opening of the regulation plate.   
     
     
         9 . The copper electroplating apparatus according to  claim 8 , further comprising:
 a bubbling device configured to form bubbles in the plating solution held in the anode chamber.   
     
     
         10 . A copper electroplating apparatus comprising;
 a plating bath configured to hold a plating solution therein;   a soluble anode of phosphorus-containing copper to be immersed in a plating solution in the plating bath;   a substrate holder configured to hold a substrate and dispose the substrate at a position opposite the anode while immersing the substrate in the plating solution in the plating bath;   a substrate holder transport device configured to transport the substrate holder holding the substrate;   a regulation plate configured to regulate an electric field, the regulation plate having an opening and being disposed between the anode and the substrate held by the substrate holder;   a diaphragm disposed so as to dose the opening of the regulation plate, the diaphragm being configured to allow permeation of metal ions therethrough and not allow permeation of additives contained in the plating solution;   a shield box which separates an interior of the plating bath into an anode chamber in which the anode and the diaphragm are disposed and a cathode chamber in which the substrate, held by the substrate holder, is disposed, the shield box having an opening, which is closed with the diaphragm, at a position opposite the opening of the regulation plate; and   a plating solution discharge line configured to discharge the plating solution from a bottom of the anode chamber.   
     
     
         11 . The copper electroplating apparatus according to  claim 10 , wherein the diaphragm is formed of a cation exchange membrane or a porous membrane. 
     
     
         12 . The copper electroplating apparatus according to  claim 10 , further comprising:
 a bubbling device configured to form bubbles in the plating solution held in the anode chamber.