Vapor Deposition Reactor Using Plasma and Method for Forming Thin Film Using the Same

Abstract

A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

What is claimed is: 
     
         1 . A method for forming thin film on a substrate in a vapor deposition reactor, comprising:
 applying voltage between a first electrode and a second electrode to generate plasma;   providing reactant gas to the generated plasma to generate radicals;   providing the generated radials onto the substrate via a first channel and at least one first injection hole connected to the first channel, the first channel and the at least one injection hole formed in the first electrode; and   moving a substrate relative to the first electrode and the second electrode to expose the substrate to the radicals provided by the at least one first injection hole.   
     
     
         2 . The method of  claim 1 , further comprising providing material to the substrate via a second channel and at least one second injection hole connected to the second channel, the second channel and the at least one second injection hole formed in the second electrode. 
     
     
         3 . The method of  claim 1 , further comprising providing cooling water through at least one channel formed in the first electrode or the second electrode. 
     
     
         4 . The method of  claim 1 , wherein the substrate is makes a linear or rotational motion relative to the first and second electrodes. 
     
     
         5 . The method of  claim 1 , further comprising controlling duty ratio of the voltage applied between the first and second electrodes. 
     
     
         6 . The method of  claim 1 , further comprising discharging the reactant precursor and the radicals remaining after exposure to the substrate through one or more exhaust unit formed in the second electrode. 
     
     
         7 . The method of  claim 1 , wherein the first electrode is located further away from the substrate compared to the second electrode. 
     
     
         8 . The method of  claim 7 , wherein a distance between the substrate and the first electrode is 10 mm to 100 mm. 
     
     
         9 . The method of  claim 7 , wherein a distance between the substrate and the second electrode is 0.1 mm to 5 mm. 
     
     
         10 . The method of  claim 1 , wherein the plasma is generated at regions of the first electrode formed with protrusions.