US2015041944A1PendingUtilityA1

Image sensor, fabricating method thereof, and device comprising the image sensor

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Assignee: KIM HONG-KIPriority: Dec 30, 2009Filed: Sep 8, 2014Published: Feb 12, 2015
Est. expiryDec 30, 2029(~3.5 yrs left)· nominal 20-yr term from priority
Inventors:Hong Ki KimHo-Kyu KangJune-Taeg LeeJae-Hee Choi
H10W 90/754H10W 72/5366H10W 42/00H10F 39/811H10F 39/199H10F 39/8053H10F 39/812H10F 39/026H10F 39/804H01L 27/14621H01L 27/14636H01L 23/564H01L 27/14618
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Claims

Abstract

Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An image sensor comprising:
 a substrate including a photoelectric transformation device adjacent to a first surface of the substrate;   an interconnection structure on the first surface, the interconnection structure including one or more intermetal dielectric layers and one or more metal interconnections in the one or more intermetal dielectric layers;   a backside interlayer dielectric layer on a second surface of the substrate which is on an opposite side of the substrate with respect to the first surface;   a moisture absorption barrier layer on the backside interlayer dielectric layer; and   a color filter on the moisture absorption barrier layer, the color filter being aligned corresponding to the photoelectric transformation device.   
     
     
         2 . The image sensor of  claim 1 , wherein the moisture absorption barrier layer includes an aluminum oxide layer or a titanium oxide layer. 
     
     
         3 . The image sensor of  claim 1 , wherein the thickness of the moisture absorption barrier layer is within the range 1 Å to 2,000 Å.

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