US2015044856A1PendingUtilityA1
Method of separating semiconductor die using material modification
Est. expiryNov 7, 2031(~5.3 yrs left)· nominal 20-yr term from priority
H10P 72/7416H10P 72/7402H10P 72/74H10P 52/00H10P 50/642H10P 50/242H10P 50/00H10P 36/00H10P 54/00H10D 62/8325H01L 21/78H01L 21/322
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Abstract
A method for separating semiconductor die includes forming a porous region on a semiconductor wafer and separating the die at the porous region using mechanical or other means.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for separating semiconductor die, comprising:
forming a porous region on a semiconductor wafer; and separating the die at the porous region.
2 . The method of separating semiconductor die of claim 1 , wherein the semiconductor die comprise silicon carbide.
3 . The method of separating semiconductor die of claim 1 , wherein the porous area is formed using anodic means.
4 . The method of separating semiconductor die of claim 3 , wherein the anodic means further comprises hydrofluoric acid.
5 . The method of separating semiconductor die of claim 1 , wherein the separating is done using mechanical means.
6 . The method of separating semiconductor die of claim 1 , wherein the separating is done chemically.Cited by (0)
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