Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques

Abstract

An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure.

1 . A method of forming a test structure, comprising:
 performing at least one first etching process through a first patterned photoresist mask layer to define at least one first feature and at least one second feature in a hard mask layer, said second feature having a length that is longer than said first feature, wherein first ends of said first and second features are aligned with one another to at least partially correspond to a first side;   after performing said at least one first etching process, performing at least one second etching process through a second patterned photoresist mask to define at least one third feature and at least one fourth feature in said hard mask layer to thereby define a completed hard mask layer, said fourth feature having a length that is longer than said third feature, wherein first ends of said third and fourth features are aligned with one another to at least partially correspond to a second side; and   after performing said at least one second etching process, performing at least one third etching process through said completed hard mask layer on a layer of material positioned under said completed hard mask layer to define a test pattern and transfer said pattern in said completed hard mask layer to said layer of material.   
     
     
         2 . The method of  claim 1 , wherein a second end of said second feature extends beyond said second side and a second end of said fourth feature extends beyond said first side. 
     
     
         3 . The method of  claim 1 , wherein said second end of said second feature extends beyond said second side by a distance of at least 25 nm and said second end of said fourth feature extends beyond said first side by a distance of at least 25 nm. 
     
     
         4 - 18 . (canceled) 
     
     
         19 . The method of  claim 1 , wherein said first, second, third and fourth features correspond to lines to be formed in said layer of material. 
     
     
         20 . The method of  claim 1 , wherein spaces between said first, second, third and fourth features correspond to trenches to be formed in said layer of material. 
     
     
         21 . A method of forming a test structure, comprising:
 forming a first hard mask layer above a layer of material;   forming a second hard mask layer on said first hard mask layer;   forming a memorization layer on said second hard mask layer;   performing at least one first etching process through a first patterned photoresist mask layer to define at least one first feature and at least one second feature in said memorization layer, said second feature having a length that is longer than said first feature, wherein first ends of said first and second features are aligned with one another to at least partially correspond to a first side;   after performing said at least one first etching process, performing at least one second etching process through a second patterned photoresist mask to define at least one third feature and at least one fourth feature in said memorization layer to thereby define a fully patterned memorization layer, said fourth feature having a length that is longer than said third feature, wherein first ends of said third and fourth features are aligned with one another to at least partially correspond to a second side;   performing at least one third etching process to transfer a pattern in said fully patterned memorization layer to said second hard mask layer and thereby define a fully patterned second hard mask layer; and   after performing said at least one third etching process, performing at least one fourth etching process through said fully patterned second hard mask layer on said layer of material positioned under said patterned hard mask layer to define a test pattern and transfer said pattern in said patterned second hard mask layer to said layer of material.   
     
     
         22 . The method of  claim 21 , wherein a second end of said second feature extends beyond said second side and a second end of said fourth feature extends beyond said first side. 
     
     
         23 . The method of  claim 22 , wherein said second end of said second feature extends beyond said second side by a distance of at least 25 nm and said second end of said fourth feature extends beyond said first side by a distance of at least 25 nm. 
     
     
         24 . The method of  claim 21 , further comprising forming said layer of material on an etch stop layer. 
     
     
         25 . The method of  claim 21 , further comprising forming an organic planarization layer on said memorization layer and forming an anti-reflective coating on said organic planarization layer. 
     
     
         26 . The method of  claim 21 , further comprising removing said fully patterned memorization layer prior to performing said at least one fourth etching process through said fully patterned second hard mask layer.