Insulation sheet made from silicon nitride, and semiconductor module structure using the same

Abstract

An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.

1 . An insulation sheet, comprising:
 a sheet-shaped silicon-nitride substrate comprising β-silicon-nitride crystal grains as a main phase; and   a surface layer formed on one face or both front and back faces of Surfaces of the silicon-nitride substrate from at least one metal element selected from the group consisting of In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti;   wherein:   the surface layer has a Vickers hardness of 200 or less and a thickness of 100 μm or less,   the silicon-nitride substrate has a surface roughness Ra of 0.2 to 1.5 μm, and   the insulation sheet is suitable for a pressure contact structure in which the insulation sheet is pressed to another member through the surface layer.   
     
     
         2 - 4 . (canceled) 
     
     
         5 . The insulation sheet of  claim 1 , wherein the surface layer is formed on one part of a surface of the silicon-nitride substrate so as to expose a surface in a vicinity of a peripheral end out of the surface of the silicon-nitride substrate to an outside, and so as also to have a peripheral end of the surface layer separated from the peripheral end out of the surface of the silicon-nitride substrate by 1 mm or more. 
     
     
         6 . The insulation sheet of  claim 1 , further comprising:
 a reaction layer between the silicon-nitride substrate and the surface layer, the reaction layer comprising at least one element selected from the group consisting of Ti, Zr and Hf.   
     
     
         7 . The insulation sheet of  claim 1 , further comprising:
 a plate-shaped pressing member arranged on a surface layer side of the insulation sheet; and   a semiconductor module is also arranged in a back face side of the pressing member,   wherein the surface layer presses the pressing member and moves the pressing member into pressure contact with the semiconductor module.   
     
     
         8 . The insulation sheet of  claim 1 , wherein the silicon-nitride substrate has a thickness of 0.8 mm or less. 
     
     
         9 . (canceled) 
     
     
         10 . A semiconductor module structure, comprising the insulation sheet of  claim 1 . 
     
     
         11 . The semiconductor module structure of  claim 10 , further comprising:
 a plate-shaped pressing member arranged so as to face a surface layer of the insulation sheet,   wherein the insulation sheet and the pressing member are brought into pressure contact with each other through the surface layer of the insulation sheet.   
     
     
         12 . The semiconductor module structure of  claim 10 , further comprising:
 a plate-shaped pressing member arranged so as to face a surface layer of the insulation sheet;   a semiconductor module arranged on a surface side opposite to the insulation sheet out of surfaces of the pressing member;   a radiating member arranged on a surface side opposite to the pressing member out of surfaces of the semiconductor module, wherein the radiating member radiates heat generated in the semiconductor module; and   a fastening member which fastens the insulation sheet and the radiating member to each other,   wherein the insulation sheet and the radiating member are fastened to each other with the fastening member, and thereby the pressing member and the semiconductor module, arranged between the insulation sheet and the radiating member, are brought into pressure contact with each other.   
     
     
         13 . The semiconductor module structure of  claim 10 , comprising:
 the insulation sheet comprising surface layers on both front and back faces of the insulation sheet;   a plate-shaped pressing member arranged so as to face the surface layer on one face of the insulation sheet; and   a semiconductor module arranged so as to face the surface layer on another face of the insulation sheet, wherein   the insulation sheet and the pressing member are brought into pressure contact with each other through the surface layer on one surface of the insulation sheet, and the insulation sheet and the semiconductor module are brought into pressure contact with each other through the surface layer on another surface of the insulation sheet.   
     
     
         14 . The semiconductor module structure of  claim 10 , comprising:
 the insulation sheet comprising surface layers on both front and back faces of the insulation sheet;   a plate-shaped pressing member arranged so as to face the surface layer on one surface of the insulation sheet;   a semiconductor module arranged so as to face the surface layer on another surface of the insulation sheet;   a radiating member arranged on a surface side opposite to the insulation sheet out of surfaces of the semiconductor module, wherein the radiating member radiates heat generated in the semiconductor module; and   a fastening member which fastens the pressing member and the radiating member to each other, wherein   the pressing member and the radiating member are fastened to each other with the fastening member, and thereby the insulation sheet and the semiconductor module arranged between the pressing member and the radiating member are brought into pressure contact with each other.   
     
     
         15 . The insulation sheet of  claim 1 , wherein the silicon-nitride crystal grains in the silicon-nitride substrate have an average grain size of 2 to 10 μm. 
     
     
         16 . The insulation sheet of  claim 1 , wherein the silicon-nitride substrate has a thermal conductivity of 80 W/m·K or more and a three-point bending strength of 600 MPa or more. 
     
     
         17 . The insulation sheet of  claim 1 , wherein the surface layer has a Vickers hardness Hv of 100 or less. 
     
     
         18 . The insulation sheet of  claim 1 , wherein the surface layer has a Vickers hardness Hv of 50 or less.