Single crystal copper, manufacturing method thereof and substrate comprising the same

Abstract

The present invention relates to a single crystal copper having [100] orientation and a volume of 0.1˜4.0×10 6 μm 3 . The present invention further provides a manufacturing method for the single crystal copper and a substrate comprising the same.

What is claimed is: 
     
         1 . A single crystal copper, having a [100] orientation and a volume of 0.1−4.0×10 6  μm 3 . 
     
     
         2 . The single crystal copper of  claim 1 , having a volume of 20−1.0×10 6  μm 3 . 
     
     
         3 . The single crystal copper of  claim 1 , having a thickness of 0.1-50 μm. 
     
     
         4 . The single crystal copper of  claim 1 , which is used as a under bump metal pad, interconnect of a semiconductor chip, a metal wire, or a circuit of a substrate. 
     
     
         5 . A method for manufacturing a single crystal copper, comprising the following sequential steps:
 (A) providing an electroplating apparatus, comprising an anode, a cathode, an electroplating solution, and a power supply, wherein the power supply is connected to the anode and the cathode respectively, and the anode and the cathode are dipped in the electroplating solution which comprises: a copper salt, an acid and a chloride ion source;   (B) performing an electroplating by a power provided by power supply to grow a nano-twinned crystal copper pillar on a surface of the cathode, wherein the nano-twinned crystal copper pillar comprises a plurality of nano-twinned crystal copper grains; and   (C) annealing the cathode with the nano-twinned crystal copper pillar at 350-600° C. for 0.5-3 hours to obtain a single crystal copper,   wherein the single crystal copper has a [100] orientation and a volume of 0.1−4.0×10 6  μm 3 .   
     
     
         6 . The method of  claim 5 , wherein, in the step (A), the cathode comprises a seed layer which is a copper layer having a thickness of 0.1-0.3 μm and formed by a physical vapor deposition (PVD). 
     
     
         7 . The method of  claim 6 , wherein, in the step (B), the nano-twinned crystal copper pillar grows on the seed layer. 
     
     
         8 . The method of  claim 5 , wherein, in the step (B), a growth rate of the nano-twinned crystal copper pillar is 1-3 nm/cycle. 
     
     
         9 . The method of  claim 5 , wherein, in the step (B), the nano-twinned crystal copper pillar has a thickness of 5-15 μm. 
     
     
         10 . The method of  claim 5 , wherein, in the step (B), the power supply is a high speed pulse power supply for electroplating, and the electroplating is performed under an operation condition of 0.1/2-0.1/0.5 T on /T off  (sec) with a current density of 0.01-0.2 A/cm 2 . 
     
     
         11 . The method of  claim 5 , wherein the single crystal copper has a volume of 20−1.0×10 6  μm 3 . 
     
     
         12 . The method of  claim 5 , wherein the single crystal copper has a thickness of 0.1-50 μm. 
     
     
         13 . The method of  claim 5 , wherein, in the step (A), the electroplating solution further comprises a gelatin, a surfactant, a lattice modifier or mixtures thereof. 
     
     
         14 . The method of  claim 5 , wherein, in the step (A), the copper salt is copper sulfate. 
     
     
         15 . The method of  claim 5 , wherein, in the step (A), the acid is sulfuric acid, methanesulfonic acid, or mixtures thereof. 
     
     
         16 . The method of  claim 5 , wherein, in the step (A), the acid has a concentration of 80-120 g/L. 
     
     
         17 . The method of  claim 5 , wherein, in the step (A), the substrate is selected from the group consisting of: a silicon substrate, a glass substrate, a quartz substrate, a metal substrate, a plastic substrate, a printed circuit board, a Group III-V substrate and mixtures thereof. 
     
     
         18 . A substrate with a single crystal copper, comprising:
 a substrate; and   a single crystal copper disposed on the substrate and having a [100] orientation and a volume of 0.1−4.0×10 6  μm 3 .   
     
     
         19 . The substrate with a single crystal copper of  claim 18 , wherein, the substrate is selected from the group consisting of: a silicon substrate, a glass substrate, a quartz substrate, a metal substrate, a plastic substrate, a printed circuit board, a Group III-V substrate and mixtures thereof.