Semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a silicon carbide region. The silicon carbide region has the first crystal face and a second crystal face. The second and the third region are disposed along the first face. The third region is provided between the first and the second region. The second transistor includes a fourth and fifth region of the second type and a sixth region of the first type. The fourth, the fifth and the sixth region are disposed along the second face of the silicon carbide region. The sixth region is provided between the fourth and the fifth region.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a first transistor including a first region of a first conductivity type, a second region of the first conductivity type and a third region of a second conductivity type, the first region being disposed along a first crystal face of a silicon carbide region, the silicon carbide region having the first crystal face and a second crystal face having a different plane orientation from the plane orientation of the first crystal face, the second region being disposed along the first crystal face, and the third region being provided between the first region and the second region, the third region being disposed along the first crystal face; and   a second transistor including a fourth region of the second conductivity type, a fifth region of the second conductivity type and a sixth region of the first conductivity type, the fourth region being disposed along the second crystal face of the silicon carbide region, the fifth region being disposed along the second crystal face, and the sixth region being provided between the fourth region and the fifth region, the sixth region being disposed along the second crystal face,   wherein   the first crystal face is orthogonal to the second crystal face,   the first crystal face is a (000-1) face.   the first conductivity type is n-type, and   the second conductivity type is p-type.   
     
     
         3 . A semiconductor device comprising:
 a first transistor including a first region of a first conductivity type, a second region of the first conductivity type and a third region of a second conductivity type, the first region being disposed along a first crystal face of a silicon carbide region, the silicon carbide region having the first crystal face and a second crystal face having a different plane orientation from the plane orientation of the first crystal face, the second region being disposed along the first crystal face, and the third region being provided between the first region and the second region, the third region being disposed along the first crystal face; and   a second transistor including a fourth region of the second conductivity type, a fifth region of the second conductivity type and a sixth region of the first conductivity type, the fourth region being disposed along the second crystal face of the silicon carbide region, the fifth region being disposed along the second crystal face, and the sixth region being provided between the fourth region and the fifth region, the sixth region being disposed along the second crystal face,   wherein   the first crystal face is a (0001) face,   the first conductivity type is n-type, and   the second conductivity type is p-type.   
     
     
         4 . A semiconductor device comprising:
 a first transistor including a first region of a first conductivity type, a second region of the first conductivity type and a third region of a second conductivity type, the first region being disposed along a first crystal face of a silicon carbide region, the silicon carbide region having the first crystal face and a second crystal face having a different plane orientation from the plane orientation of the first crystal face, the second region being disposed along the first crystal face, and the third region being provided between the first region and the second region, the third region being disposed along the first crystal face; and   a second transistor including a fourth region of the second conductivity type, a fifth region of the second conductivity type and a sixth region of the first conductivity type, the fourth region being disposed along the second crystal face of the silicon carbide region, the fifth region being disposed along the second crystal face, and the sixth region being provided between the fourth region and the fifth region, the sixth region being disposed along the second crystal face,   wherein   the first crystal face is a (0001) face,   the first conductivity type is p-type, and   the second conductivity type is n-type.   
     
     
         5 . A semiconductor device comprising:
 a first transistor including a first region of a first conductivity type, a second region of the first conductivity type and a third region of a second conductivity type, the first region being disposed along a first crystal face of a silicon carbide region, the silicon carbide region having the first crystal face and a second crystal face having a different plane orientation from the plane orientation of the first crystal face, the second region being disposed along the first crystal face, and the third region being provided between the first region and the second region, the third region being disposed along the first crystal face; and   a second transistor including a fourth region of the second conductivity type, a fifth region of the second conductivity type and a sixth region of the first conductivity type, the fourth region being disposed along the second crystal face of the silicon carbide region, the fifth region being disposed along the second crystal face, and the sixth region being provided between the fourth region and the fifth region, the sixth region being disposed along the second crystal face,   wherein   the first crystal face is a (0001) face,   the second crystal face is a (11-20) face.   
     
     
         6 . The semiconductor device according to  claim 2 , wherein
 the first transistor includes a first insulating film provided on the third region and a first electrode provided on the first insulating film, and   the second transistor includes a second insulating film provided on the sixth region and a second electrode provided on the second insulating film.   
     
     
         7 . The semiconductor device according to  claim 2 , wherein the second region has continuity with the fifth region. 
     
     
         8 . The semiconductor device according to  claim 2 , wherein a crystal polymorph of the silicon carbide region is 4H. 
     
     
         9 . The semiconductor device according to  claim 3 , wherein
 the first transistor includes a first insulating film provided on the third region and a first electrode provided on the first insulating film, and   the second transistor includes a second insulating film provided on the sixth region and a second electrode provided on the second insulating film.   
     
     
         10 . The semiconductor device according to  claim 3 , wherein the second region has continuity with the fifth region. 
     
     
         11 . The semiconductor device according to  claim 3 , wherein a crystal polymorph of the silicon carbide region is 4H. 
     
     
         12 . The semiconductor device according to  claim 4 , wherein
 the first transistor includes a first insulating film provided on the third region and a first electrode provided on the first insulating film, and   the second transistor includes a second insulating film provided on the sixth region and a second electrode provided on the second insulating film.   
     
     
         13 . The semiconductor device according to  claim 4 , wherein the second region has continuity with the fifth region. 
     
     
         14 . The semiconductor device according to  claim 4 , wherein a crystal polymorph of the silicon carbide region is 4H. 
     
     
         15 . The semiconductor device according to  claim 5 , wherein
 the first transistor includes a first insulating film provided on the third region and a first electrode provided on the first insulating film, and   the second transistor includes a second insulating film provided on the sixth region and a second electrode provided on the second insulating film.   
     
     
         16 . The semiconductor device according to  claim 5 , wherein the second region has continuity with the fifth region. 
     
     
         17 . The semiconductor device according to  claim 5 , wherein a crystal polymorph of the silicon carbide region is 4H.