US2015103399A1PendingUtilityA1
Method of producing glass substrate and glass substrate
Est. expiryMay 24, 2032(~5.8 yrs left)· nominal 20-yr term from priority
C23C 16/40C03C 2217/73C03C 17/366C03C 17/3411C03C 17/36G02B 1/11G02B 5/208C03C 2218/153C03C 2218/152C03C 17/245G02B 5/08
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Claims
Abstract
A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD, the method comprising:
preparing the glass substrate; and forming the first layer on the glass substrate by the low-temperature CVD, wherein, in the glass substrate after said forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and a C content of the first layer is 1.64 at % or less.
2 . The method as claimed in claim 1 , wherein said forming the first layer includes supplying the glass substrate with an organic metal precursor.
3 . The method as claimed in claim 2 , wherein the organic metal precursor includes at least one component selected from the group consisting of Si, Ti, Zn, Sn and Al.
4 . The method as claimed in claim 2 , wherein the organic metal precursor includes at least one component selected from the group consisting of a —CH 3 group, a —OH group and a —H group.
5 . The method as claimed in claim 1 , wherein the first layer is at least one of oxide, nitride, and oxynitride.
6 . The method as claimed in any of claims 1 to 5 , wherein said forming the first layer is performed at a deposition rate in a range of 50 nm·m/min to 400 nm·m/min.
7 . The method as claimed in claim 1 , wherein the low-temperature CVD is PECVD.
8 . The method as claimed in claim 1 , further comprising:
forming a second layer over the glass substrate by a method other than the low-temperature CVD.
9 . The method as claimed in claim 8 , wherein said forming the second layer is performed before or after said forming the first layer.
10 . The method as claimed in claim 8 , further comprising:
forming a third layer over the glass substrate by the low-temperature CVD after said forming the first layer.
11 . The method as claimed in claim 10 , wherein, in the glass substrate after said forming the third layer, an integrated value after the baseline correction in the wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first through third layers is 9.0 or less.
12 . A glass substrate having a first layer formed on a surface of the glass substrate by low-temperature CVD,
wherein an integrated value after a baseline correction in a wavenumber range of 2600 cm −1 to 3800 cm −1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and a C content of the first layer is 1.64 at % or less.
13 . The glass substrate as claimed in claim 12 , wherein the first layer is at least one of oxide, nitride, and oxynitride.
14 . The glass substrate as claimed in claim 13 , wherein the first layer includes at least one selected from the group consisting of SiO 2 , TiO 2 , ZnO, SnO and Al 2 O 3 .
15 . The glass substrate as claimed in claim 13 , wherein the first layer includes at least one selected from the group consisting of SiN, TiN and AlN.
16 . The glass substrate as claimed in claim 12 , wherein the glass substrate has a haze value of 0.2% or less after heat treatment at 650° C.
17 . The glass substrate as claimed in claim 12 , wherein the low-temperature CVD is PECVD.
18 . The glass substrate as claimed in claim 12 , further comprising:
a second layer placed over the surface of the glass substrate, the second layer being formed by a method other than the low-temperature CVD.
19 . The glass substrate as claimed in claim 18 , wherein the second layer is placed on top of the first layer.
20 . The glass substrate as claimed in claim 18 , wherein the first layer is placed on top of the second layer.
21 . The glass substrate as claimed in claim 12 , further comprising:
a third layer placed over the surface of the glass substrate, the third layer being formed by the low-temperature CVD.
22 . Infrared reflecting glass, comprising:
the glass substrate as set forth in claim 12 ; and a structure where two or more dielectric layers of different refractive indices are alternately combined, the structure being on the glass substrate, wherein one of the dielectric layers corresponds to the first layer.
23 . Anti-reflection glass, comprising:
the glass substrate as set forth in claim 12 ; and a structure where two or more dielectric layers of different refractive indices are alternately combined, the structure being on the glass substrate, wherein one of the dielectric layers corresponds to the first layer.
24 . Low-E glass, comprising:
the glass substrate as set forth in claim 12 ; a bottom layer formed of a dielectric placed immediately over the glass substrate; and a silver layer placed between two zinc oxide layers placed over the bottom layer, wherein the bottom layer corresponds to the first layer.
25 . Low-E glass, comprising:
the glass substrate as set forth in claim 12 ; a layer containing silver placed between two dielectric layers placed over the glass substrate; and a top layer placed over the two dielectric layers, the top layer being formed of a dielectric different in refractive index from the two dielectric layers, wherein the top layer corresponds to the first layer.Join the waitlist — get patent alerts
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