US2015118395A1PendingUtilityA1

Vapor Deposition of Metal Oxides, Silicates and Phosphates, and Silicon Dioxide

62
Assignee: HARVARD COLLEGEPriority: Sep 28, 2000Filed: Dec 31, 2014Published: Apr 30, 2015
Est. expirySep 28, 2020(expired)· nominal 20-yr term from priority
Inventors:Roy G. GordonJill S. BeckerDennis M. HausmannSeigi Suh
H10P 14/69397H10P 14/69395H10P 14/69392H10P 14/69391H10P 14/6923H10P 14/6339H10P 14/6334H10P 14/693H10P 14/668H10P 14/69215H10P 14/6933H10P 14/68H10P 14/6934H10D 64/691H10D 64/514H10D 62/124H10D 1/68C01G 35/00C23C 16/30C23C 16/401C01G 25/02C01G 27/02C01B 33/126C23C 16/45525C01B 25/36C01B 33/20C23C 16/402C23C 16/405C23C 16/455C01B 25/30C01B 33/26C23C 16/45553C23C 16/45531C07F 9/11C07F 9/091C01B 13/34C23C 16/40
62
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A process for forming materials comprising silicon, oxygen and one or more metals or metalloids, comprising:
 reacting the vapor of one of an alkoxysilanol and an alkoxysilanediol together with a vapor of one or more of a metal compound and a metalloid compound.   
     
     
         2 . A process for forming materials comprising silicon, oxygen and one or more metals or metalloids, comprising:
 exposing a substrate alternately to the vapor of one or an alkoxysilanol and an alkoxysilanediol and the vapor of one or more of a metal compound or a metalloid compound to form a film on the substrate.   
     
     
         3 . The process of  claim 1 , wherein compound is deposited as a film on a substrate. 
     
     
         4 . The process as in  claim 1  or  2 , wherein the silanol has the formula 
       
         
           
           
               
               
           
         
       
       where the R n  represents hydrogen, alkyl groups, fluoroalkyl groups or alkyl groups substituted by other atoms or groups, R n  being any one of the groups R 1  through R 9 , and where R n  are the same or different. 
     
     
         5 . The process of  claim 4 , wherein the groups R n  contain between one and four carbons and are the same or different. 
     
     
         6 . The process of  claim 5 , wherein the groups R n  are all methyl groups. 
     
     
         7 . The process of  claim 5 , wherein R 1 , R 4  and R 7  are ethyl groups and R 2 , R 3 , R 5 , R 6 , R 8  and R 9  are methyl groups and the silanol has the formula 
       
         
           
           
               
               
           
         
       
     
     
         8 . The process of  claim 1  or  2 , wherein a metal or metalloid compound contains metal-nitrogen or metalloid-nitrogen bonds. 
     
     
         9 . The process of  claim 8 , wherein a metal or metalloid compound is selected from Table 1. 
     
     
         10 . The process of  claim 1  or  2 , wherein a metal compound is selected from Table 2. 
     
     
         11 . The process of  claim 1  or  2 , wherein a metal or metalloid compound is selected from Table 3. 
     
     
         12 . A process for forming materials comprising phosphorus, oxygen and one or more metals or metalloids, comprising:
 reacting a vapor of a bis(alkyl)phosphate with a vapor of one or more of a metal compound and a metalloid compound.   
     
     
         13 . A process for forming materials comprising phosphorus, oxygen and one or more metals or metalloids, comprising:
 exposing a substrate alternately to a vapor of a bis(alkyl)phosphate and a vapor of one or more of a metal compound and metalloid compound to form a film on the substrate.   
     
     
         14 . The process of  claim 12 , wherein the material comprising phosphorus, oxygen and one or more metals or metalloids is deposited as a film on a substrate. 
     
     
         15 . The process as in  claim 12  or  13 , wherein the bis(alkyl)phosphate has the formula 
       
         
           
           
               
               
           
         
       
       where the R n  represents hydrogen, alkyl groups, fluoroalkyl groups or alkyl groups substituted by other atoms or groups, R n  being any one of the groups R 1  through R6, and wherein R n  are the same or different. 
     
     
         16 . The process of  claim 15 , wherein the groups R n  contain between one and four carbons and may be the same or different. 
     
     
         17 . The process of  claim 16 , wherein the groups R 1 , R 3 , R 4  and R 6  are methyl groups, the groups R 2  and R 5  are hydrogen, and the compound has the formula 
       
         
           
           
               
               
           
         
       
     
     
         18 . The process of  claim 12  or  13 , wherein a metal or metalloid compound contains metal-nitrogen or metalloid-nitrogen bonds. 
     
     
         19 . The process of  claim 18 , wherein a metal or metalloid compound is chosen from Table 1. 
     
     
         20 . The process of  claim 12  or  13 , wherein a metal compound is chosen from Table 2. 
     
     
         21 . The process of  claim 13  or  14 , wherein a metal or metalloid compound is selected from Table 3. 
     
     
         22 . A process for forming a material comprising silicon, comprising:
 exposing a substrate to one or more vapors chosen from the group consisting of alkoxysilanols, alkoxysilanediols and silylenes.   
     
     
         23 . The process of  claim 22 , wherein the silylene is the compound described by the formula 
       
         
           
           
               
               
           
         
       
       wherein R is an alkyl group. 
     
     
         24 . The process of  claim 23 , wherein R is tert-butyl. 
     
     
         25 . A process for forming a material comprising phosphorus, comprising:
 exposing a substrate to one or more vapors selected from the group consisting of bis(alkyl)phosphates, phosphorus(III) oxide and white phosphorus.   
     
     
         26 . A process for forming a material comprising oxygen, comprising:
 exposing a substrate to one or more vapors chosen from the group consisting of arene hydrates.   
     
     
         27 . The process of  claim 26 , wherein the arene hydrate is benzene hydrate, a naphthalene hydrate, a substituted benzene hydrate or a substituted naphthalene hydrate. 
     
     
         28 . A process for forming a metal oxide, comprising:
 exposing a heated surface alternately to the vapor of one or more metal amides and then to the vapors of water or an alcohol.   
     
     
         29 . A process as in  claim 28 , wherein the alcohol is an arene hydrate. 
     
     
         30 . A process as in  claim 28 , wherein the metal amide or amides are chosen from Table 1. 
     
     
         31 . A process for forming material comprising oxygen and one or more metals, comprising:
 exposing a surface alternately to the vapor of one or more organometallic compounds and then to the vapors of an arene hydrate.   
     
     
         32 . A process as in  claim 31 , wherein the organometallic compounds are chosen from Table 2.

Join the waitlist — get patent alerts

Track US2015118395A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.