Inventor · disambiguated record
Dennis M. Hausmann
Also filed as: HAUSMANN DENNIS · HAUSMANN DENNIS M · HAUSMANN DENNIS MICHAEL
86 granted patents·19 pending applications·8,268 citations·filing 2001–2024
99Inventor score
Top patents by PatentIndex Score
105 records- 0199US9911595B1Selective growth of silicon nitrideLAM RES CORP·Filed 2017·Granted Mar 6, 2018·388 cites·17 claims
- 0299US9865815B2Bromine containing silicon precursors for encapsulation layersLAM RES CORP·Filed 2016·Granted Jan 9, 2018·434 cites·19 claims
- 0399US9601693B1Method for encapsulating a chalcogenide materialLAM RES CORP·Filed 2015·Granted Mar 21, 2017·43 cites·19 claims
- 0499US8647993B2Methods for UV-assisted conformal film depositionLAVOIE ADRIEN·Filed 2012·Granted Feb 11, 2014·487 cites·18 claims
- 0598US11209729B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2019·Granted Dec 28, 2021·21 cites·14 claims
- 0698US10831096B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2018·Granted Nov 10, 2020·34 cites·18 claims
- 0798US10514598B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2017·Granted Dec 24, 2019·33 cites·10 claims
- 0898US10043656B1Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxideLAM RES CORP·Filed 2017·Granted Aug 7, 2018·24 cites·13 claims
- 0998US10043655B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2017·Granted Aug 7, 2018·28 cites·20 claims
- 1098US9996004B2EUV photopatterning of vapor-deposited metal oxide-containing hardmasksLAM RES CORP·Filed 2015·Granted Jun 12, 2018·398 cites·20 claims
- 1198US9875891B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Jan 23, 2018·478 cites·15 claims
- 1298US9805941B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2017·Granted Oct 31, 2017·44 cites·26 claims
- 1398US9793110B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2016·Granted Oct 17, 2017·25 cites·16 claims
- 1498US9778561B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2015·Granted Oct 3, 2017·380 cites·9 claims
- 1598US9576811B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2015·Granted Feb 21, 2017·65 cites·26 claims
- 1698US9570274B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2015·Granted Feb 14, 2017·30 cites·11 claims
- 1798US9564312B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2014·Granted Feb 7, 2017·415 cites·14 claims
- 1898US9384998B2Technique to deposit sidewall passivation for high aspect ratio cylinder etchLAM RES CORP·Filed 2015·Granted Jul 5, 2016·32 cites·17 claims
- 1998US9257274B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2013·Granted Feb 9, 2016·523 cites·23 claims
- 2098US9214333B1Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALDLAM RES CORP·Filed 2014·Granted Dec 15, 2015·539 cites·21 claims
- 2198US9070555B2Method for depositing a chlorine-free conformal sin filmNOVELLUS SYSTEMS INC·Filed 2013·Granted Jun 30, 2015·31 cites·19 claims
- 2298US7790633B1Sequential deposition/anneal film densification methodNOVELLUS SYSTEMS INC·Filed 2006·Granted Sep 7, 2010·643 cites·23 claims
- 2398US7482247B1Conformal nanolaminate dielectric deposition and etch bag gap fill processNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 27, 2009·583 cites·27 claims
- 2498US7148155B1Sequential deposition/anneal film densification methodNOVELLUS SYSTEMS INC·Filed 2004·Granted Dec 12, 2006·416 cites·34 claims
- 2597US10665501B2Deposition of Aluminum oxide etch stop layersLAM RES CORP·Filed 2017·Granted May 26, 2020·22 cites·16 claims
- 2697US10454029B2Method for reducing the wet etch rate of a sin film without damaging the underlying substrateLAM RES CORP·Filed 2016·Granted Oct 22, 2019·11 cites·22 claims
- 2797US10361076B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2017·Granted Jul 23, 2019·17 cites·4 claims
- 2897US10186426B2Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)LAM RES CORP·Filed 2017·Granted Jan 22, 2019·16 cites·21 claims
- 2997US10141505B2Bromine containing silicon precursors for encapsulation layersLAM RES CORP·Filed 2017·Granted Nov 27, 2018·16 cites·20 claims
- 3097US9670579B2Method for depositing a chlorine-free conformal SiN filmNOVELLUS SYSTEMS INC·Filed 2015·Granted Jun 6, 2017·18 cites·20 claims
- 3197US8999859B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2013·Granted Apr 7, 2015·56 cites·25 claims
- 3297US8728956B2Plasma activated conformal film depositionLAVOIE ADRIEN·Filed 2011·Granted May 20, 2014·541 cites·39 claims
- 3397US8637411B2Plasma activated conformal dielectric film depositionSWAMINATHAN SHANKAR·Filed 2011·Granted Jan 28, 2014·99 cites·44 claims
- 3496US10804099B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Oct 13, 2020·13 cites·16 claims
- 3596US10199212B2Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxideLAM RES CORP·Filed 2018·Granted Feb 5, 2019·14 cites·20 claims
- 3696US10176984B2Selective deposition of silicon oxideLAM RES CORP·Filed 2017·Granted Jan 8, 2019·11 cites·15 claims
- 3796US9859153B1Deposition of aluminum oxide etch stop layersLAM RES CORP·Filed 2016·Granted Jan 2, 2018·19 cites·20 claims
- 3896US9230800B2Plasma activated conformal film depositionNOVELLUS SYSTEMS INC·Filed 2014·Granted Jan 5, 2016·41 cites·22 claims
- 3996US8592328B2Method for depositing a chlorine-free conformal sin filmHAUSMANN DENNIS·Filed 2012·Granted Nov 26, 2013·111 cites·20 claims
- 4096US8563414B1Methods for forming conductive carbon films by PECVDFOX KEITH·Filed 2010·Granted Oct 22, 2013·21 cites·18 claims
- 4196US7745346B2Method for improving process control and film conformality of PECVD filmNOVELLUS SYSTEMS INC·Filed 2008·Granted Jun 29, 2010·538 cites·23 claims
- 4296US6969539B2Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxideHARVARD COLLEGE·Filed 2001·Granted Nov 29, 2005·88 cites·31 claims
- 4395US10242866B2Selective deposition of silicon nitride on silicon oxide using catalytic controlLAM RES CORP·Filed 2017·Granted Mar 26, 2019·9 cites·17 claims
- 4495US9589790B2Method of depositing ammonia free and chlorine free conformal silicon nitride filmLAM RES CORP·Filed 2014·Granted Mar 7, 2017·22 cites·21 claims
- 4595US9548188B2Method of conditioning vacuum chamber of semiconductor substrate processing apparatusLAM RES CORP·Filed 2014·Granted Jan 17, 2017·18 cites·15 claims
- 4694US11133180B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2019·Granted Sep 28, 2021·6 cites·14 claims
- 4794US10629429B2Selective deposition of silicon oxideLAM RES CORP·Filed 2018·Granted Apr 21, 2020·6 cites·16 claims
- 4894US10559461B2Selective deposition with atomic layer etch resetLAM RES CORP·Filed 2017·Granted Feb 11, 2020·10 cites·7 claims
- 4994US10515816B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2018·Granted Dec 24, 2019·6 cites·18 claims
- 5094US7507848B2Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxideHARVARD COLLEGE·Filed 2005·Granted Mar 24, 2009·18 cites·11 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →