US2015136595A1PendingUtilityA1
Sputtering target for forming wiring film of flat panel display
Est. expiryAug 1, 2028(~2 yrs left)· nominal 20-yr term from priority
H10P 14/44H10W 20/4424C23C 14/14C23C 14/3414H05K 3/16H05K 1/09H05K 1/0306C23C 14/165C22C 9/05C22C 9/01C22C 9/00Y10T428/12431
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Claims
Abstract
A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.
Claims
exact text as granted — not AI-modified1 - 4 . (canceled)
5 . A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom %; Al: 0.8 to 11 atom %; and the balance of Cu and inevitable impurities.
6 . A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom %; Al: 0.8 to 11 atom %; P: 0.001 to 0.1 atom%; and the balance of Cu and inevitable impurities.
7 . A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom %; Al: 0.8 to 11 atom %; Mn; and the balance of Cu and inevitable impurities.
wherein a total content of Mn and Al is in a range of more than 0.8 to 11 atom %.
8 . A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom%; Al: 0.8 to 11 atom %; P: 0.001 to 0.1 atom%; Mn; and the balance of Cu and inevitable impurities.
wherein a total content of Mn and Al is in a range of more than 0.8 to 11 atom %.Join the waitlist — get patent alerts
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