Light emitting device

Abstract

A light emitting device includes a substrate, a coupling unit and an organic light emitting unit. The coupling unit includes a first conductive layer, a first light emitting layer and a second conductive layer. The first conductive layer is located on the substrate. The first light emitting layer is located between the first conductive layer and the second conductive layer. The organic light emitting unit is located adjacent to the second conductive layer.

What is claimed is: 
     
         1 . A light emitting device, comprising:
 a substrate;   a coupling unit comprising a first conductive layer, a first light emitting layer and a second conductive layer, the first conductive layer located on the substrate, the first light emitting layer located between the first conductive layer and the second conductive layer; and   an organic light emitting unit located adjacent to the second conductive layer.   
     
     
         2 . The light emitting device according to  claim 1 , wherein the organic light emitting unit is configured for selectively emitting a first light and exciting the first light emitting layer to emit a second light, such that a surface plasmon resonance is induced by the second light on a surface between the first conductive layer and the first light emitting layer and on a surface between the second conductive layer and the first light emitting layer. 
     
     
         3 . The light emitting device according to  claim 2 , wherein the first light has a second light emitting wavelength, the second light has a first light emitting wavelength, and the second light emitting wavelength is less than the first light emitting wavelength. 
     
     
         4 . The light emitting device according to  claim 2 , wherein the organic light emitting unit comprises a first electrode layer, a second light emitting layer and a second electrode layer, the second light emitting layer is located between the first electrode layer and the second electrode layer, the second light emitting layer is configured for emitting the first light based on the voltage difference between the first electrode layer and the second electrode layer. 
     
     
         5 . The light emitting device according to  claim 4 , wherein the first electrode layer is adjacent to the second conductive layer. 
     
     
         6 . The light emitting device according to  claim 5 , further comprising a transparent and insulated layer located between the first electrode layer and the second conductive layer. 
     
     
         7 . The light emitting device according to  claim 4 , wherein the organic light emitting unit further comprises an electron transmission layer and a hole transmission layer, wherein the electron transmission layer is located between the second electrode layer and the second light emitting layer, and the hole transmission layer is located between the second light emitting layer and the first electrode layer. 
     
     
         8 . The light emitting device according to  claim 4 , wherein the second light emitting layer comprises an organic light emitting layer for emitting light excited by electron or luminance. 
     
     
         9 . The light emitting device according to  claim 4 , wherein the thickness of the second light emitting layer is 50 nm to 2000 nm. 
     
     
         10 . The light emitting device according to  claim 4 , wherein the second light emitting layer comprises a plurality of layers for emitting light with different light emitting wavelengths, respectively. 
     
     
         11 . The light emitting device according to  claim 10 , wherein the light emitting wavelengths emitted by the plurality of layers of the second light emitting layer are all less than the first light emitting wavelength. 
     
     
         12 . The light emitting device according to  claim 1 , wherein the first conductive layer or the second conductive layer comprises a single-layered or a double-layered conductive layer. 
     
     
         13 . The light emitting device according to  claim 12 , wherein the doubled-layered conductive layer comprises a metal thin film and a metal oxidation film. 
     
     
         14 . The light emitting device according to  claim 12 , wherein the material of the single-layered conductive layer is selected from a group consisting of gold, silver, aluminum, platinum, zinc, nickel, copper and combinations thereof. 
     
     
         15 . The light emitting device according to  claim 12 , wherein the material of the single-layered conductive layer is a metal wire, the material of the metal wire is selected from a group consisting of gold, silver, aluminum, platinum, zinc, nickel, copper and combinations thereof. 
     
     
         16 . The light emitting device according to  claim 1 , wherein the material of the first conductive layer is the same as that of the second conductive layer. 
     
     
         17 . The light emitting device according to  claim 1 , wherein the material of the first light emitting layer includes organic light emitting material, non-organic light emitting material or combinations thereof. 
     
     
         18 . The light emitting device according to  claim 17 , wherein the non-organic light emitting material includes quantum dots or phosphor material. 
     
     
         19 . The light emitting device according to  claim 1 , wherein the thickness of the first conductive layer or the second conductive layer is in a range of 3 nm to 30 nm. 
     
     
         20 . The light emitting device according to  claim 1 , wherein the thickness of the first light emitting layer is in a range of 50 nm to 250 nm.