Method for forming copper-based film and material for forming copper-based film

Abstract

The present invention is directed to a method for forming a copper-based film on a substrate in supercritical fluid, wherein (N,N′-Diisopropylpropion amidinate) copper dimer is dissolved in supercritical fluid and copper is deposited on the substrate to form the copper-based film thereon.

1 . A method for forming a copper-based film on a substrate in supercritical fluid, wherein a chemical compound represented by the following Formula [I] is dissolved in the supercritical fluid and copper is deposited on the substrate to form the copper-based film thereon. 
       
         
           
           
               
               
           
         
         wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6  is a hydrocarbon group having a carbon number of 1 to 10, and wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6  may be the same or may be different from one another. 
       
     
     
         2 . The method for forming a copper-based film according to  claim 1 , wherein the chemical compound represented by the Formula [I] is dissolved in a solvent and then supplied to the supercritical fluid to be dissolved therein. 
     
     
         3 . The method for forming a copper-based film according to  claim 2 , wherein the solvent is one or more selected from a ketone, an ether, and a hydrocarbon. 
     
     
         4 . The method for forming a copper-based film according to  claim 3 , wherein the solvent is a ketone. 
     
     
         5 . The method for forming a copper-based film according to  claim 4 , wherein the solvent is one or more selected from acetone, methylethyl ketone, methylpropyl ketone, methyl isobutyl ketone, methyl amyl ketone, diethyl ketone, and cyclohexanone. 
     
     
         6 . The method for forming a copper-based film according to  claim 1 , wherein each of R 1 , R 2 , R 4 , and R 5  is an iso-propyl group, and each of R 3  and R 6  is independently selected from a methyl group, an ethyl group, and an n-butyl group. 
     
     
         7 . The method for forming a copper-based film according to  claim 1 , wherein each of R 1 , R 2 , R 4 , and a R 5  is an iso-propyl group, and each of R 3  and R 6  is an ethyl group. 
     
     
         8 . The method for forming a copper-based film according to  claim 1 , wherein each of R 1 , R 2 , R 4 , and R 5  is an n-propyl group, and each of R 3  and R 6  is independently selected from a methyl group, an ethyl group, and an n-butyl group. 
     
     
         9 . The method for forming a copper-based film according to  claim 1 , wherein each of R 1 , R 2 , R 4 , and R 5  is an n-butyl group, and each of R 3  and R 6  is independently selected from a methyl group and an ethyl group. 
     
     
         10 . The method for forming a copper-based film according to  claim 1 , wherein each of R 1 , R 2 , R 4 , and R 5  is an iso-butyl group, and each of R 3  and R 6  is independently selected from a methyl group, an ethyl group, and an n-butyl group. 
     
     
         11 . The method for forming a copper-based film according to  claim 1 , wherein each of R 1 , R 2 , R 4 , and R 5  is a sec-butyl group, and each of R 3  and R 6  is independently selected from a methyl group, an ethyl group, and an n-butyl group. 
     
     
         12 . The method for forming a copper-based film according to  claim 1 , wherein each of R 1 , R 2 , R 4 , and R 5  is a phenyl group, and each of R 3  and R 6  is independently selected from a methyl group and an ethyl group. 
     
     
         13 . The method for forming a copper-based film according to  claim 1 , wherein the supercritical fluid is a supercritical fluid comprising CO 2 . 
     
     
         14 . The method for forming a copper-based film according to  claim 1 , wherein the supercritical fluid is a mixture of CO 2  and H 2 . 
     
     
         15 . (canceled)