Semiconductor device

Abstract

A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a lead frame;   a circuit board located on the lead frame;   a power device including a switching element, the power device being mounted on the circuit board via a bump located between the power device and the circuit board; and   a heat releasing member connected to the power device.   
     
     
         2 . A semiconductor device according to  claim 1 , wherein the circuit board is a multi-layer wiring board. 
     
     
         3 . A semiconductor device according to  claim 1 , wherein the circuit board includes a capacitor element, a resistor element, an inductor element, a diode element and a switching element. 
     
     
         4 . A semiconductor device according to  claim 1 , wherein the circuit board includes a circuit outputting an output signal in response to an input signal, the output signal being different from the input signal. 
     
     
         5 . A semiconductor device according to  claim 1 , wherein the heat releasing member is connected to the lead frame. 
     
     
         6 . A semiconductor device according to  claim 1 , further comprising a sealing resin covering the lead frame, the circuit board, the power device and the heat releasing member. 
     
     
         7 . A semiconductor device according to  claim 1 , further comprising a sealing resin covering the lead frame, the circuit board, the power device and the heat releasing member so as to expose a part of the heat releasing member;
 wherein a surface of the exposed part of the heat releasing member is flush with a surface of the sealing resin.   
     
     
         8 . A semiconductor device according to  claim 7 , wherein the surface of the exposed part of the heat releasing member has a convexed and concaved shape. 
     
     
         9 . A semiconductor device according to  claim 7 , wherein the exposed part of the heat releasing member has a flow path formed therein. 
     
     
         10 . A semiconductor device according to  claim 7 , wherein:
 the sealing resin includes a first resin and a second resin;   the first resin is located between the circuit board and the power device; and   the second resin is located so as to cover the first resin.   
     
     
         11 . A semiconductor device according to  claim 10 , wherein the first resin has a coefficient of thermal expansion closer to the coefficient of thermal expansion of the bump than the coefficient of thermal expansion of the second resin. 
     
     
         12 . A semiconductor device according to  claim 10 , wherein the first resin has a heat conductivity higher than the heat conductivity of the second resin. 
     
     
         13 . A semiconductor device according to  claim 1 , further comprising a sealing resin covering the lead frame, the circuit board, the power device and the heat releasing member so as to expose a part of the heat releasing member;
 wherein a top surface and a side surface of the part of the heat releasing member are exposed.   
     
     
         14 . A semiconductor device according to  claim 13 , wherein the top surface of the exposed part of the heat releasing member has a convexed and concaved shape. 
     
     
         15 . A semiconductor device according to  claim 13 , wherein the exposed part of the heat releasing member includes a flow path. 
     
     
         16 . A semiconductor device according to  claim 13 , wherein:
 the sealing resin includes a first resin and a second resin;   the first resin is located between the circuit board and the power device; and   the second resin is located so as to cover the first resin.   
     
     
         17 . A semiconductor device according to  claim 16 , wherein the first resin has a coefficient of thermal expansion closer to the coefficient of thermal expansion of the bump than the coefficient of thermal expansion of the second resin. 
     
     
         18 . A semiconductor device according to  claim 16 , wherein the first resin has a heat conductivity higher than the heat conductivity of the second resin. 
     
     
         19 . A semiconductor device according to  claim 1 , wherein the heat releasing member extends in a plurality of different directions from the power device, and parts of the heat releasing member extending in the plurality of different directions are connected to the lead frame. 
     
     
         20 . A semiconductor device according to  claim 1 , wherein the heat releasing member covers at least circuits provided on the circuit board.