Semiconductor light emitting element and method for manufacturing same

Abstract

According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor light emitting element, comprising:
 forming a semiconductor stacked body including a light emitting layer on a crystal growth substrate;   forming a reflection layer on the semiconductor stacked body;   forming a first bonding electrode covering the reflection layer and including a convex portion and a bottom portion provided around the convex portion;   forming a second bonding electrode made of a solder material on a support substrate;   bonding the first bonding electrode and the support substrate by stacking the first bonding electrode and the second bonding electrode, heating the first bonding electrode and the second bonding electrode to higher than or equal to melting point of the solder material with pressurization, and filling a step difference between the convex portion and the bottom portion of the first bonding electrode; and   removing the crystal growth substrate.   
     
     
         2 . The method according to  claim 1 , wherein
 the reflection layer includes an alloy made of a first metal and a second metal having a lower light reflectance than the first metal, and includes an interior region and an exterior region provided around the interior region in plan view and having a smaller thickness than the interior region, and the light reflectance at a surface of the interior region is higher than the light reflectance at a surface of the exterior region on a side of the semiconductor stacked body, and   the convex portion is formed so as to cover the interior region.   
     
     
         3 . The method according to  claim 2 , wherein
 the forming a reflection layer includes selectively forming a first film made of the first metal, and forming a second film made of the second metal on the first metal and a region where the first metal has been removed,   the first metal is one of Ag, an Ag alloy, and Al, and   the second metal is one of Au, Pt, and Pd.   
     
     
         4 . The method according to  claim 2 , wherein
 the forming a reflection layer includes forming a second film made of the second metal, and selectively forming a first film made of the first metal on the second film,   the first metal is one of Ag, an Ag alloy, and Al, and   the second metal is one of Au, Pt, and Pd.   
     
     
         5 . The method according to  claim 1 , wherein
 the forming a reflection layer includes forming a film being smaller than the semiconductor stacked body in plan view and including Ag.   
     
     
         6 . The method according to  claim 1 , wherein
 the forming a reflection layer includes forming a transparent conductive film on a surface of the semiconductor stacked body, and forming the reflection layer on a surface of the transparent conductive film.