Method of forming a pattern

Abstract

A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.

What is claimed is: 
     
         1 . A method of forming a semiconductor device, the method comprising:
 forming a first pattern on a substrate;   forming a second pattern on a sidewall of the first pattern;   etching the substrate using the first pattern and the second pattern as an etch mask;   removing the second pattern; and   after removing the second pattern, etching the substrate using the first pattern,   wherein a portion of the first pattern is removed while removing the second pattern.