Resistive random access memory and method for fabricating the same

Abstract

A resistive random access memory and a method for fabricating the same are provided. The method includes providing a structure comprising a substrate, a bottom electrode disposed on the substrate, a metal oxide layer disposed on the bottom electrode, and an oxygen atom gettering layer disposed on the metal oxide layer; and subjecting the structure to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

What is claimed is: 
     
         1 . A method for fabricating a resistive random access memory, comprising:
 providing a structure comprising a substrate, a bottom electrode disposed on the substrate, a metal oxide layer disposed on the bottom electrode, and an oxygen atom gettering layer disposed on the metal oxide layer; and   subjecting the structure to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.   
     
     
         2 . The method as claimed in  claim 1 , wherein the bottom electrode comprises an oxygen barrier layer. 
     
     
         3 . The method as claimed in  claim 1 , wherein the bottom electrode comprises TaN, TiN, TiAlN, TiW, Pt, W, Ru, or combinations thereof. 
     
     
         4 . The method as claimed in  claim 1 , wherein the thickness of the bottom electrode is between 5-500 nm. 
     
     
         5 . The method as claimed in  claim 1 , wherein the metal oxide layer comprises a binary oxide. 
     
     
         6 . The method as claimed in  claim 1 , wherein the metal oxide layer comprises oxides containing Al, Hf, Ti, Nb, Ta, La, or Zr. 
     
     
         7 . The method as claimed in  claim 1 , wherein the thickness of the metal oxide layer is between 1-100 nm. 
     
     
         8 . The method as claimed in  claim 1 , wherein the thickness of the oxygen atom gettering layer is between 1-50 nm. 
     
     
         9 . The method as claimed in  claim 1 , wherein the oxygen atom gettering layer comprises metal. 
     
     
         10 . The method as claimed in  claim 1 , wherein the oxygen atom gettering layer comprises Mg, Al, Zn, Ti, Hf, La, Ta, Zr, Cu, laminations thereof, or combinations thereof. 
     
     
         11 . The method as claimed in  claim 1 , wherein the oxygen atom gettering layer comprises partially oxidized metallic oxide. 
     
     
         12 . The method as claimed in  claim 11 , wherein the oxygen atom gettering layer comprises partially oxidized metallic oxides containing Mg, Al, Zn, Ti, Hf, La, Ta, Zr, Cu, or combinations thereof. 
     
     
         13 . The method as claimed in  claim 11 , wherein the oxygen atom gettering layer comprises TiO, TaO, or AlO. 
     
     
         14 . The method as claimed in  claim 1 , wherein the top electrode comprises TaN, TiN, TiAlN, TiW, Pt, W, Ru, or combinations thereof. 
     
     
         15 . The method as claimed in  claim 1 , wherein the thickness of the top electrode is between 5-500 nm. 
     
     
         16 . The method as claimed in  claim 1 , wherein the thermal treatment comprises an annealing treatment. 
     
     
         17 . The method as claimed in  claim 16 , wherein the temperature of the annealing treatment is between 200-800° C. 
     
     
         18 . The method as claimed in  claim 1 , wherein the thermal treatment comprises a microwave heating treatment. 
     
     
         19 . The method as claimed in  claim 18 , wherein the temperature of the microwave heating treatment is between 200-800° C. 
     
     
         20 . The method as claimed in  claim 1 , wherein the thermal treatment comprises electro-migration of oxygen atoms. 
     
     
         21 . A resistive random access memory, comprising:
 a bottom electrode disposed on a substrate;   a metal oxide layer with oxygen vacancies disposed on the bottom electrode and directly contacted to the bottom electrode;   an oxygen atom gettering layer, oxidized by migrated oxygen atoms of the metal oxide layer, directly contacted to the metal oxide layer, wherein the oxygen atom gettering layer has a concentration gradient of migrated oxygen atoms; and   a top electrode formed on the oxygen atom gettering layer.